EMIF05-SK01F3 5 line IPAD, EMI filter including ESD protection Datasheet production data Description The EMIF05-SK01F3 chip is a highly integrated filter device designed to suppress EMI/RFI noise in all systems subjected to electromagnetic interference. This filter includes ESD protection circuitry, which prevents damage to the protected device when Flip Chip 11 bumps subjected to ESD surges up to 15 kV. Figure 1. Pin configuration (bump view) Features 1 2 3 EMI (I/O) low-pass filter I1 I2 O2 A High efficiency in EMI/ESD protection Very thin package I3 O1 B Lead-free package High reliability offered by monolithic integration O3 I4 GND C High reduction of parasitic elements through integration and wafer level packaging I5 O5 O4 D Complies with the following standards: IEC 61000-4-2 level 4: Figure 2. Functional schematic 15 kV (air discharge) 4.7 k INPUT OUTPUT 8 kV (contact discharge) I1 to I5 O1 to O5 IEC 61000-4-2 level 1: 1 nF ESD level 4 2 kV (air discharge) (8 kV contact) 2 kV (contact discharge) Applications C2 GND Where EMI filtering in ESD sensitive equipment is Table 1. Pin name required: Mobile phones and communication systems INPUT OUTPUT Computers, printers and MCU boards. I1 (A1) O1 (B3) I2 (A2) O2 (A3) I3 (B1) O3(C3) I4 (C1) O4 (D3) I5 (D1) O5 (D2) TM: IPAD is a trademark of STMicroelectronics July 2014 DocID024489 Rev 1 1/7 This is information on a product in full production. www.st.com Obsolete Product(s) - Obsolete Product(s)Characteristics EMIF05-SK01F3 1 Characteristics Table 2. Absolute maximum ratings (T = 25 C) amb Symbol Parameter Value Unit External pins (A1, A2, B1, C1, D1): ESD discharge IEC 61000-4-2, level 4 15 Air discharge Contact discharge 8 V kV PP Internal pins (A3, B3, C3, D3, D2): (1) ESD discharge IEC 61000-4-2 , level 1 Air discharge 2 Contact discharge 2 T Operating temperature range - 40 to + 85 op C T Storage temperature range - 55 to 150 stg 1. Measurements done on IEC 61000-4-2 test bench.For further details see Application note AN3353, IEC 61000-4-2 standard testing. Figure 3. Electrical characteristics (definitions) Symbol P arameter V BR = Breakdown voltage I RM = Leakage current at V RM V RM = Stand-off voltage C X = Line capacitance R Series resistance between X= input and ouptput Table 3. Electrical characteristics (T = 25 C) amb Symbol Test conditions Min. Typ. Max. Unit I V = 3 V 200 nA RM RM V I = 1 mA 6 10 V BR R R1 R2, R3, R4, R5 V = 0 V, V = 30 mV, F = 1 MHz 4.23 4.7 5.17 , line osc V = 0 V, V = 30 mV, F = 1 MHz line osc C1, C2, C3, C4, C5 0.8 1 1.2 nF (measured under zero light conditions) 2/7 DocID024489 Rev 1 Obsolete Product(s) - Obsolete Product(s)
