EMIF04-EAR02M8 STMicroelectronics

EMIF04-EAR02M8 4-line IPAD EMI filter and ESD protection for headset Features lead-free package high attenuation: -30 dB at 900 MHz low cut-off frequencies: 60 MHz for speaker lines QFN-8L high current capability: 50 mA per line very low PCB space consumption: 1.5 mm x 1.7 mm very thin package: 0.6 mm maximum Figure 1. Pin configuration (bottom side) high efficiency in ESD suppression IEC6 1000-4-2 level 4 MIC P Ext MIC P Int high reliability offered by monolithic integration MIC N Ext MIC N Int Complies with following standards: EAR Ext EAR Int IEC 61000-4-2 level 4 all pins: EAR Ext EAR Int 15 kV (air discharge) 8 kV (contact discharge) Figure 2. Equivalent circuit Application RRR mobile phones MICMICMIC CCC L MICL MICL MIC Description The EMIF04-EAR02M8 chip is a highly integrated RRR MICMICMIC device designed to suppress EMI/RFI noise for CCC L MICL MICL MIC mobile phone headsets. The new LC architecture on the speaker lines provides a high attenuation value maintaining a very low serial resistance. LLL EAREAREAR The QFN-8L package offers the possibility to CCC integrate the whole function in a very small PCB L EARL EARL EAR space. Additionally, this filter includes ESD protection LLL EAREAREAR circuitry, which prevents damage to the protected CCC device when subjected to ESD surges up 30 kV. L EARL EARL EAR TM: IPAD is a trademark of STMicroelectronics September 2010 Doc ID 15508 Rev 2 1/12 www.st.com 12 GNDCharacteristics EMIF04-EAR02M8 1 Characteristics Table 1. Absolute maximum ratings (T = 25 C) amb Symbol Parameter Value Unit ESD IEC 61000-4-2 V air discharge 30 kV PP contact discharge 30 I Maximum rms current per channel 50 mA EAR T Operating junction temperature -30 to 125 C j T Storage temperature range -55 to +150 C stg Figure 3. Electrical symbols and parameters I Breakdown voltage V BR V Stand-off voltage RM Leakage current V I RM RM I V V RM BR RM V I V V RM RM BR Table 2. Electrical characteristics (T = 25 C) amb Symbol Test conditions Min. Typ. Max. Unit V I = 1 mA 7 V BR R I V = 3 V 100 nA RM RM L 1.5 nH EAR R Parasitic resistance of inductor L 0.30 0.6 L EAR R 54 68 82 MIC C V = 0 V DC, 1 MHz 84 105 126 pF L EAR R C V = 0 V DC, 1 MHz 60 76 92 pF L MIC R Cut-off frequency earphone line: F 60 MHz c EAR Z = Z = 50 SOURCE LOAD Cut-off frequency microphone line: F 70 MHz c MIC Z = Z = 50 SOURCE LOAD 2/12 Doc ID 15508 Rev 2