EMIF03-SIM06F3 3-line IPAD, EMI filter including ESD protection Datasheet production data Description The EMIF03-SIM06F3 chip is a highly integrated audio filter device designed to suppress EMI/RFI noise in all systems subjected to electromagnetic interface. The filter included ESD protection circuitry, which prevents damage to the protected device when subjected to ESD surges up to 15 kV. Flip-chip package (11 bumps) Figure 1. Pin configuration (bump side) 1 2 3 Features A EMI symmetrical (I/O) low-pass filter High efficiency in ESD protection B Lead-free package Very thin package High reliability offered by monolithic integration C High reduction of parasitic elements through integration and wafer level packaging D Complies with the following standards: IEC 61000-4-2 level 4 15 kV (air discharge) Figure 2. Functional schematic 8 kV (contact discharge) IEC 61000-4-2 level 1 D1 D2 D3 10000 2 kV (air discharge) R4 100 2 kV (contact discharge) A3 A1 R1 B1 B3 Application R2 100 C1 C3 R3 Where EMI filtering in ESD sensitive equipment is required: A2 C2 GND GND Mobile phones and communication systems A2 and C2 bumps must be conneced together on the PCB Computers, printers and MCU boards December 2013 DocID024459 Rev 1 1/7 This is information on a product in full production. www.st.com 7Characteristics EMIF03-SIM06F3 1 Characteristics Table 1. Absolute maximum ratings (T = 25 C) amb Symbol Parameter Value Unit Internal pins (A1, B1, C1): (1) ESD discharge IEC 61000-4-2 , level 1 2 Air discharge Contact discharge 2 V kV PP External pins (A3, B3, C3, D1, D2, D3): (1) ESD discharge IEC 61000-4-2 , level 4 Air discharge 20 Contact discharge 20 T Operating temperature range - 40 to + 85 op T Storage temperature range - 55 to 150 stg 1. Measurements done on IEC 61000-4-2 test bench. For further details see Application note AN3353, IEC 61000-4-2 standard testing. Figure 3. Electrical characteristics (definitions) Symbol P arameter V BR = Breakdown voltage V CL I RM = Leakage current V RM V RM = Stand-off voltage V CL = Clamping voltage I PP = Peak pulse current C line = Line capacitance R I/O = Series resistance between PP input and ouptput Table 2. Electrical characteristics (T = 25 C) amb Symbol Test conditions Min. Typ. Max. Unit I V = 3 V 50 nA RM RM V I = 1 mA 6 V BR R R1 R3 Tolerance 20% 100 , R2 Tolerance 20% 47 R4 Tolerance 20% 10 k V = 0 V, V = 30 mV, F = 10 MHz line osc C 810 12 pF line (measured under zero light conditions) 2/7 DocID024459 Rev 1