EMIF04-1502M8 STMicroelectronics

EMIF04-1502M8 4-line IPAD low capacitance EMI filter and ESD protection in micro QFN package Features 8 1 EMI asymmetrical (I/O) low-pass filter 7 2 GND High efficiency in EMI filtering GND 6 3 Very low PCB space consumption: 1.7 mm x 1.5 mm 5 4 Very thin package: 0.6 mm max High efficiency in ESD suppression on input Micro QFN 1.7 mm x 1.5 mm pins (IEC 61000-4-2 level 4) (bottom view) High reliability offered by monolithic integration Figure 1. Pin configuration (top view) High reducing of parasitic elements through integration and wafer level packaging 1 Input Output 8 Lead-free package Complies with following standards: 2 Input Output 7 IEC 61000-4-2 level 4 input pins 15 kV (air discharge) 3 Input Output 6 8 kV (contact discharge) MIL STD 883G - Method 3015-7 Class 3A 4 Input Output 5 (all pins) Applications Where EMI filtering in ESD sensitive equipment is required: Figure 2. Basic cell configuration LCD and camera for mobile phones 170 Input Output Computers and printers Communication systems MCU boards Typical line capacitance = 14 pF 2.5 V Description The EMIF04-1502M8 is a 4-line, highly integrated device designed to suppress EMI/RFI noise in all systems exposed to electromagnetic interference. This filter includes an ESD protection circuitry, which prevents damage to the application when subjected to ESD surges up to 15 kV on the input TM: IPAD is a trademark of STMicroelectronics pins. January 2009 Rev 6 1/10 www.st.comCharacteristics EMIF04-1502M8 1 Characteristics Table 1. Absolute ratings (limiting values at T = 25 C unless otherwise specified) amb Symbol Parameter Value Unit ESD IEC 61000-4-2 air discharge on input pins 15 V ESD IEC 61000-4-2 contact discharge on input pins 8 kV PP ESD IEC 61000-4-2 contact discharge on output pins 4 T Junction temperature 125 C j T Operating temperature range -40 to + 85 C op T Storage temperature range -55 to +150 C stg Table 2. Electrical characteristics (T = 25 C) amb Symbol Parameter I V Breakdown voltage I F BR I Leakage current V RM RM V Stand-off voltage RM V BR VF V VRM CL V Clamping voltage CL V I RM I R R Dynamic resistance d I Peak pulse current PP R Series resistance between Input & Output I/O I PP C Input capacitance per line line Symbol Test conditions Min. Typ. Max. Unit V I = 1 mA 6 8 10 V BR R I V = 3 V per line 100 nA RM RM R Tolerance 10% 153 170 187 I/O C V = 2.5 V dc, V = 30 mV, F = 1 MHz 12 14 16.5 pF line LINE OSC Figure 3. S21 attenuation measurement Figure 4. Analog cross talk measurements dB dB 0.00 0.000.00 --10.0010.00 --20.0020.00 --30.0030.00 -15.00 --40.0040.00 --50.0050.00 --60.0060.00 -30.00 --70.0070.00 --80.0080.00 --90.0090.00 F (Hz) F (Hz) -45.00 --100.00100.00 100.0k 1.0M 10.0M 100.0M 1.0G 100.0k100.0k 1.0M1.0M 10.0M10.0M 100.0M100.0M 1.0G1.0G 2/10