EMIF03-SIM04F3 3-line IPAD, EMI filter including ESD protection Features EMI symmetrical (I/O) low-pass filter high efficiency in EMI/ESD protection lead-free package very thin package high reliability offered by monolithic integration Lead-free Flip-Chip package (11 bumps) high reduction of parasitic elements through integration and wafer level packaging Figure 1. Pin configuration (bump side) Complies with the following standards 1 2 3 IEC 61000-4-2 level 4: 15 kV (air discharge) A 8 kV (contact discharge) B IEC 61000-4-2 level 1: 2 kV (air discharge) C 2 kV (contact discharge) D Applications Where EMI filtering in ESD sensitive equipment is Figure 2. Configuration required: D1 D2 D3 mobile phones and communication systems 100 A1 A3 R1 computers, printers and MCU Boards 47 B1 B3 R2 100 C1 C3 R3 Description The EMIF03-SIM04F3 Flip Chip is a low A2 C2 GND GND capacitance EMI filter designed to suppress A2 and C2 bumps must be connected together on the PCB EMI/RFI noise in all systems subjected to electromagnetic interference. This filter includes ESD protection circuitry, which prevents damage to the protected device when subjected to ESD surges up to 15 kV. TM: IPAD is a trademark of STMicroelectronics. October 2010 Doc ID 17053 Rev 2 1/7 www.st.com 7 Electrical characteristics EMIF03-SIM04F3 1 Electrical characteristics Table 1. Absolute maximum ratings (T = 25 C) amb Symbol Parameter Value Unit Internal pins (A1, B1, C1): ESD discharge IEC 61000-4-2, level 1, air discharge 2 ESD discharge IEC 61000-4-2, level 1, contact discharge 2 V kV PP External pins (A3, B3, C3, D1, D2 and D3): ESD discharge IEC 61000-4-2, level 4, air discharge 15 ESD discharge IEC 61000-4-2, level 4, contact discharge 15 P Line resistance power dissipation at 70 C 60 mW d T Operating temperature range - 40 to + 85 C op T Storage temperature range - 55 to 150 C stg Figure 3. Electrical characteristics (definitions) I Symbol Parameter V = Breakdown voltage BR I = Leakage current V RM RM IR R = Series resistance IRM VBR VRM I/O V IRM VRM VBR between input and output IR C = Line capacitance line Table 2. Electrical characteristics (T = 25 C) amb Symbol Test conditions Min. Typ. Max. Unit V I = 1 mA 6 V BR R I V = 3 V per line 50 200 nA RM RM R R Tolerance 20% 80 100 120 1, 3 R Tolerance 20% 37.6 47 56.4 2 V = 0 V, V = 30 mV, F = 1 MHz line osc C 810 12 pF line (1) (measured under zero light conditions) 1. A2 and C2 bumps must be connected together on the printed circuit board 2/7 Doc ID 17053 Rev 2