EMIF03-SIM02C2 3-line IPAD EMI filter including ESD protection Features EMI symmetrical (I/O) low-pass filter high efficiency in EMI filtering lead-free coated package very low PCB space occupation: 1.42 mm x 1.42 mm very thin package: 0.65 mm high efficiency in ESD suppression high reliability offered by monolithic integration Coated Flip-Chip package high reduction of parasitic elements through (8 bumps) integration and wafer level packaging Complies with following standards: IEC 61000-4-2 level 4 on external and V Figure 1. Pin configuration (bump side) CC pins: 3 2 1 15 kV (air discharge) 8 kV (contact discharge) RST RST A in ext MIL STD 883G - Method 3015-7 Class 3 CLK CLK Gnd B Applications in ext Where EMI filtering in ESD sensitive equipment is Data Data VCC C required: in ext SIM Interface (subscriber identify module) UIM Interface (universal identify module) Description The EMIF03-SIM02C2 is a highly integrated device designed to suppress EMI/RFI noise in all systems subjected to electromagnetic interference. The EMIF03 Flip-Chip packaging means the package size is equal to the die size. This filter includes an ESD protection circuitry which protects the application from damage when subjected to ESD surges up 15 kV. TM: IPAD is a trademark of STMicroelectronics September 2010 Doc ID 13251 Rev 3 1/8 www.st.com 8Characteristics EMIF03-SIM02C2 1 Characteristics Figure 2. Basic cell configuration VCC 100 RST in RST ext R1 47 CLK in CLK ext R2 100 Data in Data ext R3 Cline = 20pF max. GND Table 1. Absolute ratings (limiting values) Symbol Parameter Value Unit Internal pins (A3, B3, C3): ESD discharge IEC61000-4-2, air discharge 2 ESD discharge IEC61000-4-2, contact discharge 2 V kV PP External pins (A2, B1, C2, C1): ESD discharge IEC61000-4-2, air discharge 15 ESD discharge IEC61000-4-2, contact discharge 8 T Maximum junction temperature 125 C j T Operating temperature range -40 to +85 C op T Storage temperature range -55 to +150 C stg Figure 3. Electrical characteristics (definitions) I Symbol Parameter I F V = Breakdown voltage BR V = Clamping voltage CL I = Leakage current V RM RM V = Stand-off voltage VF RM V V V CL BR RM V I = Forward current F IRM I R I = Peak pulse current PP I = Breakdown current R V = Forward voltage drop F IPP 2/8 Doc ID 13251 Rev 3