EMIF02-SPK03F2 STMicroelectronics

EMIF02-SPK03F2 2-channel EMI filter and ESD protection for speaker phone Datasheet production data Features 2-channel EMI symmetrical (I/O) low-pass filter High efficiency in EMI filtering: S21 attenuation, -40 dB at 900 MHz Xtalk, in audio band, -60 dB Very low PCB space consumption: 0.89 x 1.26 mm Flip Chip (5 bumps) Very thin package: 0.6 mm after reflow High efficiency in ESD suppression on input Figure 1. Pin configuration (bump side) pins (IEC 61000-4-2 level 4) High reliability offered by monolithic integration 1 3 2 High reduction of parasitic elements through O1 I1 A integration and wafer level packaging Packaged in lead-free Flip Chip GND B Complies with the following standards I2 O2 C IEC 61000-4-2 level 4: 15 kV (air discharge) 8 kV (contact discharge) Figure 2. Functional schematic Application L I1 O1 Mobile phones Portable devices C C Connectivity devices L Description I2 O2 The EMIF02-SPK03F2 chip is a highly integrated C C device designed to suppress EMI/RFI noise for interface line filtering. The EMIF02-SPK03F2 is 2-channel, ultra compact, high attenuation filter available in 0.5 mm pitch WLCSP package. Additionally, this filter includes ESD protection circuitry, which prevents damage to the protected device when subjected to ESD surges up 30 kV. June 2012 Doc ID 023219 Rev 1 1/10 This is information on a product in full production. www.st.com 10Characteristics EMIF02-SPK03F2 1 Characteristics Table 1. Absolute maximum ratings (T = 25 C) amb Symbol Parameter Value Unit (1) ESD discharge IEC 61000-4-2 V 30 kV Air discharge PP Contact discharge I Maximum rms currrent per channel 800 mA SPK T Maximum junction temperature 125 C j T Operating temperature range -30 to 85 C op T Storage temperature range -55 to + 150 C stg 1. Measurements done on IEC 61000-4-2 test bench. For further details see Application note AN3353, IEC 61000-4-2 standard testing. Figure 3. Electrical characteristics - definitions Symbol Parameter I PP Slope: 1/Rd V = Breakdown voltage BR V = Clamping voltage CL I = Leakage current V RM RM V = Stand-off voltage RM V CL I = Peak pulse current PP V CL I = Breakdown current R R = Dynamic resistance d Slope: 1/R d I PP Table 2. Electrical characteristics - values (Tamb = 25 C) Symbol Test conditions Min. Typ. Max. Unit V I = 1 mA 6 V BR R R tp = 100 ns 0.2 d I V = 3 V per line 0.3 A RM RM R DC resistance of the inductor 0.07 0.1 DC L C Vline = 0 V, V = 30 mV, F = 1 MHz 250 pF line OSC 2/10 Doc ID 023219 Rev 1