EMIF02-AV01F3 STMicroelectronics

EMIF02-AV01F3 Dual audio and video line IPAD, EMI filter and ESD protection Features High-density capacitor EMI low-pass filter and ESD protection High-efficiency in EMI filtering Lead-free package 400 m pitch Flip Chip 5 bumps Very small PCB footprint: 0.77 mm x 1.17 mm Very thin package: 0.605 mm Figure 1. Pin configuration (bump side High reliability offered by monolithic integration view) Reduction of parasitic elements thanks to CSP integration 12 Complies with the following standards A IEC 61000-4-2 level 4 on external pin (A2, C2) 15 kV (air discharge) B 8 kV (contact discharge) IEC 61000-4-2 level 1 on internal pin (A1, C1) C 2 kV (air discharge) 2 kV (contact discharge) Figure 2. Schematic Application R A2 A1 Dual audio and video line interface protection and filtering in mobile phones C 2 kV 15 kV Description B2 The EMIF02-AV01F3 is a highly integrated array Gnd designed to suppress EMI / RFI noise and provide impedance matching for mobile phones and 15 kV C 2 kV portable applications. The EMIF02-AV01F3 is in Flip-Chip package to C1 C2 offer space saving and high RF performance. R Additionally, this low-pass filter includes an ESD protection circuitry to prevent damage to the application when subjected to ESD surges up to 15 kV. TM: IPAD is a trademark of STMicroelectronics. April 2010 Doc ID 12835 Rev 4 1/7 www.st.com 7 Characteristics EMIF02-AV01F3 1 Characteristics Table 1. Absolute maximum ratings (T = 25 C) amb Symbol Parameter Value Unit Internal pins (A1, C1) ESD discharge IEC 61000-4-2, air discharge 2 ESD discharge IEC 61000-4-2, contact discharge 2 V pp External pins (A2, C2) kV ESD discharge IEC 61000-4-2, air discharge 15 ESD discharge IEC 61000-4-2, contact discharge 8 T Maximum junction temperature 125 C j P Total Power Dissipation 200 mW TOT T Operating temperature range - 40 to + 85 C op T Storage temperature range - 55 to 150 C stg Figure 3. Electrical characteristics (definitions) I Symbol Parameter V = Breakdown voltage BR I = Leakage current V RM RM IR V = Stand-off voltage RM VBR VRM IRM V C = Line capacitance IRM line VRM VBR IR Table 2. Electrical characteristics (values, T = 25 C) amb Symbol Test conditions Min. Typ. Max. Unit V I = 1 mA 14 18 V BR R I V = 3 V per line 0.5 A RM RM R 12 15 18 I/O C V = 0 V, V = 30 mV, F = 100 kHz 2.56 3.2 3.84 nF line line osc 2/7 Doc ID 12835 Rev 4