EMIF02-MIC03F2 STMicroelectronics

EMIF02-MIC03F2 2-line IPAD, EMI filter and ESD protection Datasheet - production data High reliability offered by monolithic integration High reducing of parasitic elements through integration and wafer level packaging Complies with the following standards: IEC 61000-4-2 level 4, on input pins 15 kV (air discharge) 8 kV (contact discharge) IEC 61000-4-2 Level 1, on output pins Flip-Chip package 2 kV (air discharge) 2 kV (contact discharge) MIL STD 883E - Method 3015-6 Class 3 Figure 1. Pin configuration (bump side) and Application basic cell configuration Mobile phones (differential microphone filtering 32 1 and ESD protection). I2 I1 A Description GND B The EMIF02-MIC03F2 is a highly integrated device designed to suppress EMI/RFI noise in all O2 O1 C systems subjected to electromagnetic interferences. The EMIF02 Flip-Chip packaging means the package size is equal to the die size. Low-pass Filter This filter includes an ESD protection circuitry Input Output which prevents damage to the application when subjected to ESD surges up 15 kV. Ri/o = 68 Cline = 100 pF GND GND GND Features EMI symmetrical (I/O) low-pass filter High efficiency in EMI filtering Very low PCB space consuming: 1.07 mm x 1.47 mm Very thin package: 0.65 mm TM: IPAD is a trademark of STMicroelectronics. High efficiency in ESD suppression July 2014 DocID11739 Rev 3 1/8 This is information on a product in full production. www.st.comElectrical characteristics EMIF02-MIC03F2 1 Electrical characteristics Table 1. Absolute maximum ratings (T = 25 C) AMB Symbol Parameter Value Unit Tj Maximum junction temperature 125 C Top Operating temperature range -40 to +85 C Tstg Storage temperature range -55 to +150 C Table 2. Electrical characteristics (T = 25 C) amb Symbol Parameters I V Breakdown voltage BR IPP I Leakage current V RM RM V Stand-off voltage RM IR VCL VBR VRM IRM V Clamping voltage CL V IRM VRM VBR VCL IR R Dynamic impedance d I Peak pulse current PP IPP R Series resistance between Input & Output I/O C Input capacitance per line line Table 3. Symbol Test condition Min Typ Max Unit V I = 1 mA 6 8 V BR R I V = 3 V per line 500 nA RM RM R Tolerance 20% 68 I/O C V = 0 V 100 pF line R 2/8 DocID11739 Rev 3