EMIF10-LCD02F3 STMicroelectronics

EMIF10-LCD02F3 10-line IPAD, EMI filter and ESD protection for LCD and cameras Features Lead-free package EMI symmetrical (I/O) low-pass filter High efficiency in EMI filtering 400 m pitch Compatible with high speed data rate Lead-free Flip-Chip package 2 (24 bumps) Very low PCB space occupation: < 4 mm Very thin package: 0.60 mm High efficiency in ESD suppression Figure 1. Pin layout (bump side) High reliability offered by monolithic integration 5 4 3 2 1 High reduction of parasitic elements through integration and wafer level packaging O1 O2 GND I1 I2 A Complies with the following standards O3 O4 I3 I4 B IEC 61000-4-2 level 4 on inputs and outputs GND I5 I6 O5 O6 C 15 kV (air discharge) 8 kV (contact discharge) O7 O8 GND I7 I8 D MIL STD 883G - Method 3015-6 Class 3 O9 O10 GND I9 I10 E Applications Where EMI filtering in ESD sensitive equipment is Figure 2. Device configuration required: LCD for mobile phones Low-pass Filter Computers and printers Input Output Communication systems MCU boards Ri/o = 70 Description Cline = 30pF GND GND GND The EMIF10-LCD02F3 is a 10-line highly integrated device designed to suppress EMI/RFI noise in all systems subjected to electromagnetic interference. The EMIF10 Flip-Chip packaging means the package size is equal to the die size. This filter includes ESD protection circuitry, which prevents damage to the protected device when subjected to ESD surges up 15 kV. TM: IPAD is a trademark of STMicroelectronics. November 2009 Doc ID 11507 Rev 3 1/8 www.st.com 8Characteristics EMIF10-LCD02F3 1 Characteristics Table 1. Absolute maximum ratings (T = 25 C) amb Symbol Parameter and test conditions Value Unit T Maximum junction temperature 125 C j T Operating temperature range -40 to +85 C op T Storage temperature range -55 to 150 C stg Figure 3. Electrical characteristics (definitions) I Symbol Parameter V = Breakdown voltage IPP BR V = Clamping voltage CL I = Leakage current V RM RM V = Stand-off voltage RM IR I = Peak pulse current VCL VBR VRM IRM PP V I = Breakdown current IRM VRM VBR VCL R IR I = Forward current PP R = Series resistanc between input and output I/O C = Input capacitance per line line IPP Table 2. Electrical characteristics (T = 25 C) amb Symbol Test conditions Min. Typ. Max. Unit V I = 1 mA 6 8 10 V BR R I V = 3 V 50 200 nA RM RM R Tolerance 20% 70 2 C Vline = 0 V, V = 30 mV, F =1 MHz 30 pF line OSC 2/8 Doc ID 11507 Rev 3