ESD051-1BF4 Datasheet 5 V low clamping single line bidirectional ESD protection Features Low clamping voltage: 11 V (IEC 61000-4-2 contact discharge at 30 ns) Bidirectional diode Low leakage current ST0201 package Complies with the following standards: IEC 61000-4-2 level 4 (exceeds level 4) ST0201 package 30 kV (air discharge) 30 kV (contact discharge) Application Where transient over voltage protection in ESD sensitive equipment is required, such as: Smartphones, mobile phones and accessories Tablet, PC, netbooks and notebooks Portable multimedia devices and accessories Digital cameras and camcorders Communication and highly integrated systems Description Product status link The ESD051-1BF4 is a bidirectional single line TVS diode designed to protect the ESD051-1BF4 power line against EOS and ESD transients. The device is ideal for applications where board space saving is required. DS12643 - Rev 4 - April 2021 www.st.com For further information contact your local STMicroelectronics sales office. ESD051-1BF4 Characteristics 1 Characteristics Table 1. Absolute maximum ratings (T = 25 C) amb Symbol Parameter Value Unit IEC 61000-4-2 contact discharge 30 V Peak pulse voltage kV pp IEC 61000-4-2 air discharge 30 P Peak pulse power (8/20 s) 110 W pp I Peak pulse current (8/20 s) 10 A pp T j Operating junction temperature range -55 to 150 T Storage junction temperature range -65 to 150 C stg T Maximum lead temperature for soldering during 10 s 260 L Figure 1. Electrical characteristics (definitions) I Symbol Parameter V Breakdown voltage I = BR PP V Clamping voltage CL = I Leakage current V = RM RM I R V = Stand-off voltage RM V V V CL BR RM I V RM I = Peak pulse current PP I RM V V V RM BR CL I R Dynamic resistance R = D I = Breakdown current I R V I PP Table 2. Electrical characteristics (values) (T = 25 C) amb Symbol Parameter Test condition Min. Typ. Max. Unit V Reverse working voltage 5 V RM V I = 1 mA Breakdown voltage 5.8 V BR R I V = 5 V Leakage current 70 nA RM RM IEC 61000-4-2, 8 kV V Clamping voltage 11 V CL contact measured at 30 ns (1) R Dynamic resistance, pulse duration 100 ns 0.145 D C V = 0 V, F = 1 MHz, V = 30 mV Line capacitance 45 pF LINE LINE OSC 1. More information are available in ST application note: AN4022 DS12643 - Rev 4 page 2/10