HSP051-2W3Y STMicroelectronics

HSP051-2W3Y Datasheet Automotive 2-line ESD protection for high speed lines Features AEC-Q101 qualified 3 Flow-through routing to keep signal integrity 2 Ultra large bandwidth: 3 GHz Ultra low capacitance: 0.7 pF 1 Extended operating junction temperature range: -40 C to 150 C SOT323-3L RoHS compliant (Jedec TO-236) Complies with ISO 10605 - C = 150 pF, R = 330 exceeds level 4 12 kV (contact discharge) 15 kV (air discharge) Complies with ISO 10605 - C = 330 pF, R = 330 8 kV (contact discharge) 12 kV (air discharge) Application The HSP051-2W3Y is designed to protect against electrostatic discharge on automotive circuits such as: Functional diagram APIX LVDS & digital video interface Ethernet and BroadrReach Product status link USB 2.0 and USB 3.0 HSP051-2W3Y High speed communication buses Product summary Order code HSP051-2W3Y Description Marking H5Y The HSP051-2W3Y is an ESD array designed for high-speed differential lines Package SOT323-3L protection. Packing Tape and reel The ultralow capacitance variation ensures negligible influence on signal-skew. DS12686 - Rev 1 - July 2018 www.st.com For further information contact your local STMicroelectronics sales office. HSP051-2W3Y Characteristics 1 Characteristics Table 1. Absolute maximum ratings (T = 25 C) amb Symbol Parameter Value Unit ISO10605 / IEC 61000-4-2 (C = 150 pF, R = 330 ): Contact discharge 12 Air discharge 15 V Peak pulse voltage kV PP ISO10605 (C = 330 pF, R = 330 ) Contact discharge 8 Air discharge 12 P Peak pulse power dissipation (8/20 s) 20 W PP I Peak Pulse current (8/20 s) 1.8 A PP T Storage temperature range -65 to +150 C stg T Operating junction temperature range -40 to +150 C j T Maximum lead temperature for soldering during 10 s 260 C L Figure 1. Electrical characteristics - parameter definitions Unidirectional device I PP V Stand-off voltage RM I Leakage current V RM RM V Breakdown voltage BR I R I V Clamping voltage RM CL I Peak pulse current PP V V V V V RM BR CL F V Forward voltage drop F I I F V I Table 2. Electrical characteristics (values) (T = 25 C) amb Symbol Test conditions Min. Typ. Max. Unit V I = 1 mA 5.3 V BR R V = 3 V 100 R I nA R V = 5 V 150 R ISO 10605- C = 150 pF, R = 330 V 18 V CL +8 kV contact discharge, measured at 30 ns C 0.7 1.0 I/O-GND V = 0 V, f = 1 MHz, V = 30 mV pF I/O OSC C 0.03 I/O-GND f S = -3 dB 3 GHz C 21 DS12686 - Rev 1 page 2/12