HSP061-4NY8 STMicroelectronics

HSP061-4NY8 4-line ESD protection for high speed lines Datasheet production data Benefits High ESD robustness of the equipment Suitable for high density boards Complies with following standards MIL-STD 883G Method 3015-7 Class 3B: 8 kV QFN-8L package IEC 61000-4-2 level 4: 8 kV (contact discharge) Figure 1. Functional schematic (top view) 15 kV (air discharge) Applications Internally The HSP061-4NY8 is designed to protect against 1 I/O 1 8 not connected electrostatic discharge on sub micron technology circuits driving: I/O 2 2 HDMI 1.3 and 1.4 Digital Video Interface GND 3 GND 7 Display Port I/O 3 USB 3.0 4 Serial ATA Internally 5 I/O 4 6 not connected Description The HSP061-4NY8 is a 4-channel ESD array with a rail to rail architecture designed specifically for the protection of high speed differential lines. Features The ultra-low variation of the capacitance ensures Flow-through routing to keep signal integrity very low influence on signal-skew. The large bandwidth and the low reflection make it Ultralarge bandwidth: 6 GHz compatible with 5 Gbps. Ultralow capacitance: 0.6 pF The device is packaged in QFN-8L with a Low time domain reflection 400 m pitch, which minimizes the PCB area. Low leakage current: 100 nA at 25 C Extended operating junction temperature range: -40 C to 150 C Package size in mm: 2 x 1 x 0.5 RoHS compliant March 2013 Doc ID 17414 Rev 5 1/9 This is information on a product in full production. www.st.com 9Characteristics HSP061-4NY8 1 Characteristics Table 1. Absolute maximum ratings T = 25 C amb Symbol Parameter Value Unit IEC 61000-4-2 contact discharge 8 V Peak pulse voltage kV PP IEC 61000-4-2 air discharge 20 I Repetitive peak pulse current (8/20 s) 3 A pp T Operating junction temperature range -40 to +150 C j T Storage temperature range -65 to +150 C stg T Maximum lead temperature for soldering during 10 s 260 C L Table 2. Electrical characteristics T = 25 C amb Symbol Parameter Test conditions Min. Typ. Max. Unit V Breakdown voltage I = 1 mA 6 V BR R I Leakage current V = 3 V 100 nA RM RM IEC 61000-4-2, +8 kV V Clamping voltage contact (I = 30 A), 18 V CL PP measured at 30 ns V = 0 V, I/O Capacitance (input/output to C F = (200 MHz - 3000 MHz), 0.5 0.6 pF I/O - GND ground) V = 30 mV OSC Capacitance variation V = 0 V F = 1 MHz, I/O C 0.03 0.05 pF I/O - GND (input/output to ground) V = 30 mV OSC f Cut-off frequency -3dB 6 GHz C (1) t = 200 ps (10 - 90%) r Z Differential impedance 85 100 115 Diff Z = 100 0 Diff 1. HDMI specification conditions. This information can be provided for other applications. Please contact your local ST office. 2/9 Doc ID 17414 Rev 5