HSP061-8M16 STMicroelectronics

HSP061-8M16 8-line ESD protection for high speed lines Datasheet - production data Applications The HSP061-8M16 is designed to protect against electrostatic discharge on sub micron technology circuits driving: HDMI 1.3 and 1.4 Digital Video Interface Display Port Serial ATA QFN-16L Figure 1. Functional schematic (top view) Features In 1 1 16 Out 1 Ultralarge bandwidth: 6.3 GHz Out 2 In 2 2 15 Ultralow capacitance: 0.6 pF 3 14 Out 3 In 3 Low time domain reflection Out 4 In 4 13 4 Low leakage current: 100 nA at 25 C Extended operating junction temperature Out 5 In 5 5 12 range: -40 C to 150 C 6 11 Out 6 In 6 Package size in mm: 3.3 x 1.5 x 0.55 RoHS compliant In 7 10 Out 7 7 In 8 Out 8 8 9 Benefits High ESD robustness of the equipment GND on tab Suitable for high density boards Description Complies with following standards MIL-STD 883G Method 3015-7 Class 3B: The HSP061-8M16 is an 8-channel ESD array with a rail to rail architecture designed specifically 8 kV for the protection of high speed differential lines. IEC 61000-4-2 level 4: The ultra-low variation of the capacitance ensures 8 kV (contact discharge) very low influence on signal-skew. The large 15 kV (air discharge) bandwidth and the low reflection make it compatible with 3.4 Gbps. The device is packaged in QFN-16L with a 400 m pitch, which minimizes the PCB area. April 2014 DocID18055 Rev 3 1/10 This is information on a product in full production. www.st.comCharacteristics HSP061-8M16 1 Characteristics Table 1. Absolute maximum ratings T = 25 C amb Symbol Parameter Value Unit IEC 61000-4-2 contact discharge 8 (1) V Peak pulse voltage kV PP IEC 61000-4-2 air discharge 20 I Repetitive peak pulse current (8/20 s) 3 A pp T Operating junction temperature range -40 to +150 C j T Storage temperature range -65 to +150 C stg T Maximum lead temperature for soldering during 10 s 260 C L 1. Measurements done on IEC 61000-4-2 test bench. For further details see Application note AN3353. Table 2. Electrical characteristics T = 25 C amb Symbol Parameter Test conditions Min. Typ. Max. Unit V Breakdown voltage I = 1 mA 6 V BR R I Leakage current V = 3 V 100 nA RM RM IEC 61000-4-2, +8 kV contact (I PP V Clamping voltage 14 V CL = 30 A), measured at 30 ns Capacitance (input/output to V = 0 V F = 200 to 3000 MHz, I/O C 0.6 0.8 pF I/O - GND ground) V = 30 mV OSC Capacitance variation V = 0 V F = 200 to 3000 MHz, I/O C 0.03 0.05 pF I/O - GND (input/output to ground) V = 30 mV OSC f Cut-off frequency -3dB 6.3 GHz C (1) t = 200 ps (10 - 90%) r Z Differential impedance 90 105 Diff Z = 100 0 Diff 1. HDMI specification conditions. This information can be provided for other applications. Please contact your local ST office. 2/10 DocID18055 Rev 3