HSP062-2M6 STMicroelectronics

HSP062-2 2-line ESD protection for high speed lines Datasheet - production data Benefits High ESD robustness of the equipment Suitable for high density boards Complies with following standards MIL-STD 883G Method 3015-7 Class 3B: 8 kV IEC 61000-4-2 level 4: HSP062-2M6 QFN-6L package 15 kV (air discharge) 8 kV (contact discharge) Applications The HSP062-2M6 is designed to protect against electrostatic discharge on sub micron technology Figure 1. Functional schematic (top view) circuits driving: HDMI 1.3 and 1.4 16 NC I/O1 Digital Video Interface Display Port 2 I/O2 5 NC USB 3.0 Serial ATA 3 4 V GND BUS Ethernet HMI QFN 6 leads Description The HSP062-2 is a 2-channel ESD array with a Features rail to rail architecture designed specifically for the Flow-through routing to keep signal integrity protection of high speed differential lines. Ultralarge bandwidth: 4.6 GHz The ultralow variation of the capacitance ensures Ultralow capacitance: 0.6 pF very low influence on signal-skew. The large bandwidth makes it compatible with 5 Gbps. Low leakage current: 100 nA at 25 C The device is packaged in QFN-6L (1.45 x 1.0 Extended operating junction temperature mm) with a 500 m pitch. range: -40 C to 150 C RoHS compliant October 2015 DocID022778 Rev 3 1/10 This is information on a product in full production. www.st.comCharacteristics HSP062-2 1 Characteristics Table 1. Absolute maximum ratings T = 25 C amb Symbol Parameter Value Unit IEC 61000-4-2 contact discharge 8 V Peak pulse voltage kV PP IEC 61000-4-2 air discharge 15 I Repetitive peak pulse current (8/20 s) 3 A pp T Operating junction temperature range -40 to +150 C j T Storage temperature range -65 to +150 C stg T Maximum lead temperature for soldering during 10 s 260 C L Table 2. Electrical characteristics T = 25 C amb Symbol Parameter Test conditions Min. Typ. Max. Unit V Breakdown voltage I = 1 mA 6 V BR R I Leakage current V = 3 V 100 nA RM RM IEC 61000-4-2, +8 kV contact (I PP V Clamping voltage 18 V CL = 30 A), measured at 30 ns Capacitance (input/output to V = 0 V, F = 200 to 3000 MHz, I/O C 0.6 0.9 pF I/O - GND ground) V = 30 mV OSC Capacitance variation V = 0 V F = 200 to 3000 MHz, I/O C 0.09 0.17 pF I/O - GND (input/output to ground) V = 30 mV OSC f Cut-off frequency -3 dB 4.6 GHz C 2/10 DocID022778 Rev 3