X-On Electronics has gained recognition as a prominent supplier of CBTVS2A12-1F3 ESD Suppressors / TVS Diodes across the USA, India, Europe, Australia, and various other global locations. CBTVS2A12-1F3 ESD Suppressors / TVS Diodes are a product manufactured by STMicroelectronics. We provide cost-effective solutions for ESD Suppressors / TVS Diodes, ensuring timely deliveries around the world.

CBTVS2A12-1F3 STMicroelectronics

CBTVS2A12-1F3 electronic component of STMicroelectronics
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See Product Specifications
Part No.CBTVS2A12-1F3
Manufacturer: STMicroelectronics
Category: ESD Suppressors / TVS Diodes
Description: ESD Suppressors / TVS Diodes DFD PROTECTION & FILTER
Datasheet: CBTVS2A12-1F3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.2056 ea
Line Total: USD 0.21

Availability - 4881
Ship by Fri. 02 Aug to Thu. 08 Aug
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
4881
Ship by Fri. 02 Aug to Thu. 08 Aug
MOQ : 1
Multiples : 1
1 : USD 0.2056
10 : USD 0.1202
100 : USD 0.1094

97
Ship by Fri. 09 Aug to Wed. 14 Aug
MOQ : 1
Multiples : 1
1 : USD 0.2069
10 : USD 0.1852
30 : USD 0.1746
100 : USD 0.1634
500 : USD 0.157
1000 : USD 0.1535

   
Manufacturer
Product Category
Series
Product Type
Vesd - Voltage ESD Contact
Vesd - Voltage ESD Air Gap
Polarity
Number of Channels
Termination Style
Breakdown Voltage
Clamping Voltage
Cd - Diode Capacitance
Package / Case
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Brand
Cnhts
Hts Code
Mxhts
Pd - Power Dissipation
Factory Pack Quantity :
Subcategory
Taric
Vf - Forward Voltage
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the CBTVS2A12-1F3 from our ESD Suppressors / TVS Diodes category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the CBTVS2A12-1F3 and other electronic components in the ESD Suppressors / TVS Diodes category and beyond.

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CBTVS2A12-1F3 Circuit breaker with transient voltage suppressor Datasheet - production data Features Transient voltage suppressor (TVS) Non-resettable over current protection (OCP) Electrostatic discharge protection Electrical overstress protection (OVP) Unidirectional device Fast response time Flip Chip Very thin package: 0.4 mm (4 bumps) High ESD protection level High integration Suitable for high density boards Figure 1. Pin configuration (bump side) Complies with the following standards: A B IEC 61000-4-2 level 4: 15 kV (air discharge) 1 15 kV (contact discharge) 2 Description The CBTVS2A12-1F3 is a single line diode TVS integrating a fuse designed specifically for the (a) Figure 2. Configuration protection of integrated circuits in portable equipment and miniaturized electronics devices W H , & 7 subject to ESD, OVP and OCP. I X VH 1RQ UHVHWWD H O E *1 *1 a. B1 and B2 bumps must be grounded on the PCB together. May 2014 DocID026350 Rev 1 1/7 This is information on a product in full production. www.st.com % % 0DQDJHR 3RZ PHQW U &KDLQSX UJHU Characteristics CBTVS2A12-1F3 1 Characteristics Table 1. Absolute maximum ratings (T = 25 C) amb Symbol Parameter Test condition Value Unit IEC 61000-4-2 contact discharge 15 V Peak pulse voltage kV PP IEC 61000-4-2 air discharge 15 10/1000 s pulse, on A2-B2, 44 T = T j amb Peak pulse power P W PP dissipation 8/20 s pulse, on A2-B2, 350 T = T j amb T Maximum operating junction temperature 125 C j T Storage temperature range -55 to +150 C stg Figure 3. Electrical characteristics (definitions) I Symbol Parameter I F V = Breakdown voltage BR V = Clamping voltage CL I = Leakage current V RM RM V = Stand-off voltage VF RM V V V CL BR RM V I = Forward current F I RM R = Dynamic impedance d I = Peak pulse current PP I = Breakdown current R Slope = 1/Rd V = Forward voltage drop F IPP Table 2. Electrical characteristics (at operating temperature: T = -30 C to +85 C, unless otherwise specified) op Symbol Test conditions Min. Typ. Max. Unit V I = 1 mA, T = 25 C 12 V BR R amb I V = 10 V, at T = 25 C 100 nA RM RM amb I = 1 A, 8/20 s pulse waveform, between A1-B1 PP V 15 V CL at T = 25 C amb V I = 850 mA, between A1-B1 1.4 V F F C V = 0 V, V = 30 mV, F = 1 MHz 180 pF line R OSC R At T = 25 C at 100 mA 50 m A1-A2 amb R After fused 1 M A1-A2 T At 5 A (maximum opening time) A -A A -A 100 ms Fuse 1 2, 2 1 T At 3.2 A, A -A A -A 24 hours Fuse2 1 2, 2 1 T I = 2 A (continuous current) at T = 25 C 500 hours fuse Lifetime DC amb 2/7 DocID026350 Rev 1

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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