HSP051-4N10 STMicroelectronics

HSP051-4N10 4-line ESD protection for high speed lines Datasheet - production data Applications The HSP051-4N10 is designed to protect against electrostatic discharge on sub micron technology circuits driving: HDMI 1.4 and 2.0 Digital video Interface Display port USB 3.0 and 3.1 QFN 1.9x1 10L Serial ATA Description The HSP051-4N10 is a 4-channel ESD array with a rail to rail architecture designed specifically for the protection of high speed differential lines. Features Flow-through routing to keep signal integrity The ultralow variation of the capacitance ensures Ultralarge bandwidth: 10 GHz very low influence on signal-skew. The large Ultralow capacitance: bandwidth makes it compatible with HDMI 2.0 4K/2K (= 5.94 Gbps) and USB 3.1 (= 10 Gbps) 0.2 pF (I/O to I/O) 0.35 pF (I/O to GND) The device is packaged in QFN 1.9 mm x 1 mm Very low dynamic resistance: 0.48 with a 400 m pitch. 100 differential impedance Figure 1: Functional schematic (top view) Low leakage current: 100 nA at 25 C Extended operating junction temperature range: -40 C to 150 C RoHS compliant Benefits High ESD protection level High integration Suitable for high density boards Complies with the following standards MIL STD 883G-Method 3015-7: class 3B 8 kV IEC 61000-4-2, level 4 25 kV (air discharge) 8 kV (contact discharge) May 2017 DocID025979 Rev 2 1/12 www.st.com This is information on a product in full production. Characteristics HSP051-4N10 1 Characteristics Table 1: Absolute maximum ratings (Tamb = 25 C) Symbol Parameter Value Unit IEC61000-4-2 contact discharge 8 V Peak pulse voltage kV pp IEC61000-4-2 air discharge 25 Tstg Storage junction temperature range -65 to +150 T Operating junction temperature range -40 to +150 C j TL Maximum lead temperature for soldering during 10 s 260 Table 2: Electrical characteristics (Tamb = 25 C) Symbol Parameter Test condition Min. Typ. Max. Unit V I = 1 mA 4.5 5.8 V BR R I V = 3.6 V 10 100 nA RM RM VCL IPP = 1 A, 8/20 s 10 V IEC 61000-4-2, +8 kV contact (IPP = 16 A), VCL 13 V measured at 30 ns I/O to GND 0.48 Dynamic resistance, pulse R d duration 100 ns GND to I/O 0.96 C V = 0 V F = 200 MHz to 9 GHz 0.2 0.3 pF I/O - I/O I/O F = 200 MHz to 2.5 GHz 0.4 0.55 pF CI/O - GND VI/O = 0 V F = 2.5 GHz to 9 GHz 0.35 0.45 pF fC -3 dB 10 GHz Time domain reflectometry: Zdiff 85 100 115 t = 200 ps (10 - 90%), Z = 100 r 0 2/12 DocID025979 Rev 2