HSP061-4M10 Datasheet 4-line ESD protection for high speed lines Features Flow-through routing to keep signal integrity Ultralarge bandwidth: 8.7 GHz Ultralow capacitance: 0.3 pF Very Low dynamic resistance: 0.48 Low leakage current: 70 nA at 25 C 100 differential impedance Extended operating junction temperature range: -40 C to 150 C QFN-10L package Thin package: 0.5 mm max. Functional schematic (top view) RoHS compliant High ESD robustness of the equipment Internal ly 1 10 I/O 1 not connected Suitable for high density boards I/O 2 2 9 Complies with following standards: GND 3 8 GND MIL-STD 883G Method 3015-7 Class 3B: 8 kV I/O 3 4 7 IEC 61000-4-2 level 4: 8 kV (contact discharge), 15 kV (air discharge) Internal ly I/O 4 5 6 not connected Applications The HSP061-4M10 is designed to protect against electrostatic discharge on sub micron technology circuits driving: HDMI 1.3 and 1.4 USB3.0 Product status Digital Video Interface HSP061-4M10 Display Port Serial ATA Thunderbolt Description The HSP061-4M10 is a 4-channel ESD array with a rail to rail architecture designed specifically for the protection of high speed differential lines. The ultralow variation of the capacitance ensures very low influence on signal-skew. The large bandwidth make the device compatible with 3.4 Gbps. The device is packaged in QFN 2.5 mm x 1 mm with a 500 m pitch, which minimizes the PCB area DS9279 - Rev 4 - February 2018 www.st.com For further information contact your local STMicroelectronics sales office.HSP061-4M10 Characteristics 1 Characteristics Table 1. Absolute maximum ratings T = 25 C amb Symbol Parameter Value Unit IEC 61000-4-2 contact discharge 8 V Peak pulse voltage kV PP IEC 61000-4-2 air discharge 20 T Operating junction temperature range -40 to +150 C j T Storage temperature range -65 to +150 C stg T Maximum lead temperature for soldering during 10 s 260 C L Table 2. Electrical characteristics T = 25 C amb Value Symbol Parameter Unit Min. Typ. Max. V I = 1 mA 6.0 V BR R I V = 3.0 V 70 nA RM RM V I = 1 A, 8/20 s 15 V CL PP CI/O - I/O VI/O = 0 V, F = 1 MHz, V = 30 mV 0.3 0.4 pF OSC VI/O = 0 V, F = 1 MHz, V = 30 mV 0.6 0.8 pF CI/O - GND OSC f -3dB 8.7 GHz C Z Time domain reflectometry: t = 200 ps (10 - 90%), Z = 100 85 100 115 diff r 0 DIFF DS9279 - Rev 4 page 2/10