HSP053-4M5 STMicroelectronics

HSP053-4M5 4-line ESD protection for high speed lines Datasheet - production data Applications The HSP053-4M5 is designed to protect against to electro-static discharge sub-micron technology circuits driving: HDMI 1.4 and HDMI 2.0 USB 3.1 Gen 1 and Gen 2 Digital video interface Display port Serial ATA The ultra-low variation of the capacitance ensures very low influence on signal-skew. The QFN-5L package large bandwidth makes it compatible with HDMI 2.0 (= 5.94 Gbps) and USB 3.1 Gen 2 (= 10 Gbps). Features Very compact 500 m pitch package, for Description easy PCB layout The HSP053-4M5 is a 4 channel ESD array with Ultra-large bandwidth: 18 GHz a rail to rail architecture designed specifically for Ultra-low capacitance: 0.15 pF (I/O to I/O) the protection of high speed differential lines. and 0.25 pF (I/O to GND) The device is packaged in Low leakage current: < 1 nA QFN 1.3 mm x 0.8 mm with a 500 m pitch. Extended operating junction temperature range: -40 C to 150 C Figure 1: Functional diagram Thin package: 0.4 mm max. RoHS compliant I/O 1 1 Benefits High ESD protection level 5 I/O 2 High integration Suitable for high density boards GND 2 Complies with the following standards 4 I/O 3 MIL-STD 883G method 3015-7 class 3B > 8 kV 3 Exceeds IEC61000-4-2 level 4 I/O 4 10 kV (contact discharge) 25 kV (air discharge) January 2018 DocID029599 Rev 3 1/11 www.st.com This is information on a product in full production. Characteristics HSP053-4M5 1 Characteristics Table 1: Absolute maximum ratings (Tamb = 25 C) Symbol Parameter Value Unit Contact discharge 10 V Peak pulse voltage kV PP Air discharge 25 T Storage temperature range -65 to +150 stg Tj Operating junction temperature range -40 to +150 C T Maximum lead temperature for soldering during 10 s 260 L Table 2: Electrical characteristics (T = 25 C) amb Symbol Test condition Min. Typ. Max. Unit V I = 1 mA 5.3 5.8 BR R V VRM 5.0 V = 3.6 V < 1 50 nA RM IRM VRM = 5.0 V 3 70 nA V IEC 61000-4-2, +8 kV contact measured at 30 ns 16 V CL I/O to GND 0.68 Dynamic resistance, Pulse duration R d 100ns GND to I/O 0.65 F = 2.5 GHz to C 0.15 0.2 I/O - I/O 9 GHz F = 200 MHz to VI/O = 0 V, VOSC = 30 mV 0.35 0.5 pF 2.5 GHz C I/O - GND F = 2.5 GHz to 0.25 0.4 9 GHz f - 3dB 18 GHz C 2/11 DocID029599 Rev 3