HSP051-4M5 STMicroelectronics

HSP051-4M5 Datasheet 4-line ESD protection for high speed Features Very compact 500 m pitch package, for easy PCB layout Very-large bandwidth: 11.5 GHz Very-low capacitance: 0.2 pF (I/O to I/O) and 0.35 pF (I/O to GND) Very low dynamic resistance : 0.35 Low leakage current: < 1 nA High ESD protection level High integration Suitable for high density boards Extended operating junction temperature range : -40 C to 150 C Exceeds IEC 61400-4-2 level standard: 20 kV (contact discharge) 30 kV (air discharge) 1 I/O 1 Applications 5 I/O 2 The HSP051-4M5 is designed to protect against to electro-static discharge sub- GND 2 micron technology circuits driving: 4 I/O 3 HDMI 2.1, HDMI 2.0 and HDMI 1.4 3 I/O 4 USB 3.1 Gen 1 and Gen 2 Display port Digital video interface Product status link Serial ATA HSP051-4M5 The ultra-low variation of the capacitance ensures very low influence on signal-skew. The large bandwidth make it compatible with HDMI 2.1 8K (12 Gbps), HDMI 2.0 4K/2K (5.94 Gbps) and USB 3.1 Gen 2 (10 Gbps). Description The HSP051-4M5 is a 4-channel ESD array with a rail to rail architecture designed specifically for the protection of high speed differential lines. The device is packaged in QFN 1.3 mm x 0.8 mm with a 500 m pitch. DS11462 - Rev 3 - February 2019 www.st.com For further information contact your local STMicroelectronics sales office.HSP051-4M5 Characteristics 1 Characteristics Table 1. Absolute maximum ratings (T = 25 C) amb Symbol Parameter Value Unit IEC 61000-4-2: V Peak pulse voltage Contact discharge 20 kV PP Air discharge 30 I Peak pulse current (8/20 s) 3 A PP T Storage temperature range -65 to +150 stg T Operating junction temperature range -40 to +150 C j T Maximum lead temperature for soldering during 10 s 260 L Figure 1. Electrical characteristics - parameters definition I PP Symbol Parameter V Breakdown voltage = BR V Clamping voltage CL = I R I Leakage current at V = RM RM I RM V = Stand-off voltage RM V V V V V Forward current RM BR CL I = F F I Breakdown current = R I = Peak pulse current I PP V = Forward voltage drop I F F V R Dynamic resistance = d I DS11462 - Rev 3 page 2/15