D7V5S1U3LP20 - D26V0S1U3LP20 1 CHANNEL HIGH SURGE TVS DIODE Product Summary Features V P I Provides ESD Protection per IEC 61000-4-2 Standard: BR (MIN) PP (MAX) R (MAX) 8.33V to 28.9V 4000W 1000nA Air 30kV, Contact 30kV One Channel of ESD Protection Low Channel Input Capacitance Description Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) This new generation TVS is designed to protect sensitive electronics Halogen and Antimony Free. Green Device (Note 3) from the damage due to ESD. The combination of small size and high For automotive applications requiring specific change ESD surge capability makes it ideal for use in portable applications control (i.e. parts qualified to AEC-Q100/101/200, PPAP such as cellular phones, digital cameras, and MP3 players. capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. Applications D7V5S1U3LP20 - D26V0S1U3LP20 Marking Information *N = Product Type Marking Code YM = Date Code Marking *N Y = Year (ex: I = 2021) M = Month (ex: 9 = September) Date Code Key Year 2018 2021 2022 2023 2024 2025 2026 2027 2028 2029 2030 Code F I J K L M N O P R S Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Conditions Peak Pulse Power Dissipation 4000 W 8/20s (Note 6) PPP Peak Pulse Power Dissipation 320 W 10/1000s (Note 6) PPP ESD Protection Contact Discharge 30 kV Standard IEC 61000-4-2 VESD CONTACT ESD Protection Air Discharge 30 kV Standard IEC 61000-4-2 V ESD AIR Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation (Note 5) 500 mW PD 250 Thermal Resistance, Junction to Ambient TA = +25C RJA C/W Operating and Storage Temperature Range -65 to +150 TJ, TSTG C Electrical Characteristics ( T = +25C, unless otherwise specified.) A Rated Rated Clamping Clamping Reverse Reverse Peak Peak Voltage Voltage Leakage Standoff Breakdown Voltage VBR (V) Pulse Pulse VCL (V) at VCL (V) at Voltage Current Current Current Part Number I = 1mA R IPPM IPPM (A) V IRM (nA) RWM IPPM (A) IPPM (A) (V) at VRWM 8/20s 10/1000s 8/20s 10/1000s Max Min Typ Max Max Max Max Max Max D7V5S1U3LP20-7 7.5 8.33 9.21 1000 250 27 18.5 12.4 D10V0S1U3LP20-7 10.0 11.1 12.8 500 200 18 23.2 18.1 D12V0S1U3LP20-7 12 13.3 14.7 200 145 13.5 27.5 23.7 D15V0S1U3LP20-7 15 16.7 18.5 200 140 13 30.5 24.6 D18V0S1U3LP20-7 18 20.0 22.1 200 120 11 33.3 29.1 D20V0S1U3LP20-7 20 22.2 24.5 200 110 10 36.4 32.0 D22V0S1U3LP20-7 22 24.4 26.9 200 98 9 40.8 35.6 D24V0S1U3LP20-7 24 26.7 29.5 200 90 8 44.4 40.0 D26V0S1U3LP20-7 26 28.9 31.9 200 80 7 50.0 45.7 Notes: 5. Device mounted on FR-4 PCB pad layout (2oz copper) as shown on Diodes Incorporateds suggested pad layout, which can be found on our website at