EMIF09-SD01F3 STMicroelectronics

EMIF09-SD01F3 9-line IPAD, EMI filter and ESD protection Features 9-line EMI low-pass filter and ESD protection High efficiency in EMI filtering Lead-free package 400 m pitch 2 Very low PCB space occupation: < 4 mm Flip Chip Very thin package: 0.6 mm 24 bumps High reliability offered by monolithic integration Reduction of parasitic elements thanks to CSP Figure 1. Pin layout (bump side) integration 5 4 3 2 1 Complies with the following standards A IEC61000-4-2 level 4 on external pins: B 15 kV (air discharge) C 8 kV (contact discharge) D IEC61000-4-2 level 2 on internal pins: E 2 kV (air discharge) 2 kV (contact discharge) MIL STD 883F - Method 3015.7 Class 3 Application Secure digital memory card in mobile phones and communication systems Description The EMIF09-SD01F3 is a highly integrated array designed to suppress EMI/RFI noise for secure digital memory cards. The EMIF09-SD01F3 is in a Flip Chip package to offer space saving and high RF performance. This low-pass filter includes ESD protection circuitry, which prevents damage to the protected device when subjected to ESD surges up 15 kV. This filter also has a low line capacitance to be compatible with high data rate signals. TM: IPAD is a trademark of STMicroelectronics. April 2008 Rev 4 1/9 www.st.comCharacteristics EMIF09-SD01F3 1 Characteristics Figure 2. Device configuration VSDVSD DADAT3 PUT3 PU CLKCLK SDCLKSDCLK R1R1 CMDCMD SDCMDSDCMD R2R2 DADATTAA00 SDDASDDATTAA00 R3R3 DADATTAA11 SDDASDDATTAA11 R4R4 DADATTAA22 SDDASDDATTAA22 R5R5 DADATTAA33 SDDASDDATTAA33 R6R6 CDCD SDCDSDCD R7R7 WPWP SDWPSDWP R8R8 WP+CDWP+CD SDWP+CDSDWP+CD R9R9 R21R21 DADAT3 PDT3 PD GND HGND H GND CGND C Table 1. Pin-signal attribution Pin Description Pin Description Pin Description Pin Description Pin Description A1 DATA2 B1 CD C1 DAT3 PD D1 WP+CD E1 DATA1 A2 DATA3 B2 CMD C2 WP D2 CLK E2 DATA0 A3 GND H B3 C3 DAT3 PU D3 GND C E3 GND C A4 SDDATA2 B4 SDCD C4 SDWP D4 SDWP+CD E4 SDDATA1 A5 SDDATA3 B5 SDCMD C5 VSD D5 SDCLK E5 SDDATA0 Table 2. Absolute ratings (limiting values) Symbol Parameter Value Unit Internal pins (A1, B1, C1, D1, E1, A2, B2, C2, D2, E2, C3) ESD discharge IEC 61000-4-2, air discharge 2 ESD discharge IEC 61000-4-2, contact discharge 2 V kV PP External pins (A4, B4, C4, D4, E4, A5, B5, C5, D5, E5) ESD discharge IEC 61000-4-2, air discharge 15 ESD discharge IEC 61000-4-2, contact discharge 8 T Junction temperature 125 C j T Operating temperature range -30 to + 85 C op T Storage temperature range -55 to 150 C stg GND bumps (GND H and GND C - A3, D3 and E3) must be connected to ground on the printed circuit board for ESD testing and RF measurements. 2/9 R1R111 R1R122 R1R133 R1R144 R1R155