ESDR7534 ESD Protection Diode Low Capacitance ESD Protection for LVDS Interfaces The ESDR7534 surge protection is designed to protect high speed www.onsemi.com data lines from ESD, EFT, and lightning. Features PIN CONFIGURATION Low Capacitance (2 pF Maximum Between I/O Lines and GND) AND SCHEMATIC Protection for the Following IEC Standards: CH4 V CH3 P IEC 6100042 (ESD) Level 4 30 kV (Contact) 30 kV (Air) This is a PbFree Device MAXIMUM RATINGS (T = 25C unless otherwise noted) J CH1 V CH2 Rating Symbol Value Unit N (Top View) Peak Power Dissipation (Note 1) P 300 W pk Maximum Peak Pulse Current I 10 A PP 2/10 s T = 25C A MARKING DIAGRAM Operating Junction Temperature Range T 55 to +125 C J Storage Temperature Range T 55 to +150 C stg SC88 7RM Lead Solder Temperature T 260 C L S7 SUFFIX Maximum (10 Seconds) CASE 419B 1 IEC 6100042 Contact ESD 30 kV IEC 6100042 Air 30 7R = Specific Device Code ISO 10605 330 pF / 330 Contact 30 M = Date Code ISO 10605 330 pF / 2 k Contact 30 = PbFree Package ISO 10605 150 pF / 2 k Contact 30 (Note: Microdot may be in either location) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ORDERING INFORMATION 1. P calculated. P = V x I . pk pk C PP Device Package Shipping Table 1. PIN DESCRIPTIONS ESDR7534W1T2G SC88 3,000 / Tape & (PbFree) Reel 4Channel, 6Lead SC706 Pin Name Type Description For information on tape and reel specifications, including part orientation and tape sizes, please 1 CH1 I/O ESD Channel refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. 2 V GND Negative Voltage Supply Rail N 3 CH2 I/O ESD Channel 4 CH3 I/O ESD Channel 5 V PWR Positive Voltage Supply Rail P 6 CH4 I/O ESD Channel Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: August, 2018 Rev. 5 ESDR7534/DESDR7534 ELECTRICAL CHARACTERISTICS I (T = 25C unless otherwise noted) A I F Symbol Parameter I Maximum Reverse Peak Pulse Current PP V Clamping Voltage I C PP V Working Peak Reverse Voltage RWM V V V C BR RWM V I Maximum Reverse Leakage Current V R RWM I V R F I T V Breakdown Voltage I BR T I Test Current T I Forward Current F V Forward Voltage I I F F PP P Peak Power Dissipation pk C Capacitance V = 0 and f = 1.0 MHz UniDirectional R *See Application Note AND8308/D for detailed explanations of datasheet parameters. ELECTRICAL CHARACTERISTICS (T =25C unless otherwise specified) A Parameter Symbol Conditions Min Typ Max Unit Reverse Working Voltage V (Note 1) 5.0 V RWM Breakdown Voltage V I = 1 mA, (Note 2) 6.0 8.0 9.5 V BR T Reverse Leakage Current I V = 5 V 3.0 A R RWM Forward Voltage V I = 100 mA 1.6 V F F Clamping Voltage V I = 10 A (2/10 s Waveform) 30 V C PP Maximum Peak Pulse Current I 2/10 s Waveform 10 A PP Junction Capacitance C V = 0 V, f = 1 MHz between I/O Pins and GND 1.3 2.0 pF J R Junction Capacitance C V = 0 V, f = 1 MHz between I/O Pins, V floating 0.7 1.0 pF J R P 1. Surge protection devices are normally selected according to the working peak reverse voltage (V ), which should be equal or greater RWM than the DC or continuous peak operating voltage level. 2. V is measured at pulse test current I . BR T Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 15.0 t = rise time to peak value 2 s r t = decay time to half value 10 s f Peak 12.5 100 Value 10.0 7.5 Half Value 50 5.0 2.5 0 0 0 2 4 68110 12 146 1820 0 t t r f TIME ( s) Ipp (A) Figure 1. Exponential Decay Pulse Waveform Figure 2. Clamping Voltage vs. Peak Pulse Current (tp = 2/10 s, R = 8 ) www.onsemi.com 2 Ipp - PEAK PULSE CURRENT - %Ipp Vclamp (V)