ESDR0524P ESD Protection Diode Low Capacitance ESD Protection for High Speed Data The ESDR0524P surge protection is designed to protect high speed www.onsemi.com data lines from ESD. Ultralow capacitance and low ESD clamping voltage make this device an ideal solution for protecting voltage MARKING sensitive high speed data lines. The flowthrough style package DIAGRAM allows for easy PCB layout and matched trace lengths necessary to maintain consistent impedance between high speed differential lines UDFN10 4P M such as HDMI. CASE 517BB Features 4P = Specific Device Code Low Capacitance (0.3 pF Typical, I/O to I/O) M = Date Code* ESD Rating of Class 3B (Exceeding 8 kV) per Human Body model = PbFree Package and Class C (Exceeding 400 V) per Machine Model (Note: Microdot may be in either location) *Date Code orientation and/or position may Protection for the Following IEC Standards: vary depending upon manufacturing location. IEC 6100042 (8 kV Contact) UL Flammability Rating of 94 V0 This is a PbFree Device PIN CONFIGURATION AND SCHEMATIC Typical Applications N/C N/C GND N/C N/C HDMI DVI 10 98 7 6 Display Port MDDI 1423 5 eSATA I/O I/O GND I/O I/O MAXIMUM RATINGS (T = 25C unless otherwise noted) J Pin 1 Pin 2 Pin 4 Pin 5 Rating Symbol Value Unit Operating Junction Temperature Range T 55 to +125 C J Storage Temperature Range T 55 to +150 C stg Lead Solder Temperature T 260 C L Maximum (10 Seconds) Pins 3, 8 IEC 6100042 Contact (ESD) ESD 12 kV IEC 6100042 Air (ESD) ESD 15 kV Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be = assumed, damage may occur and reliability may be affected. ORDERING INFORMATION Device Package Shipping ESDR0524PMUTAG UDFN10 3000 / See Application Note AND8308/D for further description of (PbFree) Tape & Reel survivability specs. For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2013 1 Publication Order Number: October, 2017 Rev. 5 ESDR0524P/DESDR0524P ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) A Parameter Symbol Conditions Min Typ Max Unit Reverse Working Voltage V I/O Pin to GND (Note 1) 5.0 V RWM Breakdown Voltage V I = 1 mA, I/O Pin to GND 5.5 V BR T Reverse Leakage Current I V = 5 V, I/O Pin to GND 1.0 A R RWM Clamping Voltage V I = 1 A, I/O Pin to GND (8 x 20 s pulse) 15 V C PP Junction Capacitance C V = 0 V, f = 1 MHz between I/O Pins 0.3 0.4 pF J R Junction Capacitance C V = 0 V, f = 1 MHz between I/O Pins and GND 0.5 0.8 pF J R 1. Surge protection devices are normally selected according to the working peak reverse voltage (V ), which should be equal or greater RWM than the DC or continuous peak operating voltage level. www.onsemi.com 2