ESDAVLC8-4BN4 4-line very low capacitance Transil array for ESD protection Datasheet production data Features Stand-off voltage: 3 V Very low capacitance: 4.5 pF Small package: 1.0 x 0.8 mm Very thin package: 0.40 mm max QFN-4L Low leakage current: 50 nA at 25 C Benefits Figure 1. Functional diagram (top view) High ESD robustness of the equipment Suitable for high speed interface Complies with the following standards: IEC 61000-4-2: I/O4 I/O1 15 kV (air discharge) 8 kV (contact discharge) GND MIL STD 883G- Method 3015-7: class3B: >25 kV (human body model) I/O2 I/O3 Applications Where transient overvoltage protection and electrical overstress protection in sensitive equipment is required, such as: Communication systems Cellular phone handsets and accessories Video equipment Description The ESDAVLC8-4BN4 is monolithic array designed to protect up to 4 lines against ESD transients. It has been designed specifically for the protection of the high speed interface of integrated circuits in portable equipment and miniaturized electronics devices. The QFN-4L package minimizes PCB space. TM: Transil is a trademark of STMicroelectronics. March 2014 DocID022192 Rev 3 1/10 This is information on a product in full production. www.st.com 10Characteristics ESDAVLC8-4BN4 1 Characteristics Table 1. Absolute maximum ratings (T = 25 C) amb Symbol Parameter Value Unit V Peak pulse voltage, IEC 61000-4-2, level 4 (contact discharge) 16 kV PP (1) Peak pulse power dissipation (8/20 s) GND to I/O 45 P W PP T initial = T I/O to GND 32 j amb I Peak pulse current (8/20 s) 1.6 A pp T Maximum junction temperature range -40 to 125 C j T Storage temperature range -55 + 150 C stg 1. For a surge greater than the maximum values, the diode will fail in short-circuit. Figure 2. Electrical characteristics (definitions) Symbol Parameter V = Breakdown voltage BR V = Clamping voltage CL I = Leakage current V RM RM V = Stand-off voltage RM I = Peak pulse current PP Table 2. Electrical characteristics (values, T = 25 C) amb Symbol Test conditions Min. Typ. Max. Unit V I = 1 mA, GND to I/O 8.5 11 14 V BR1 R V I = 1 mA, I/O to GND 14.5 17 20 V BR2 R I V = 3 V 50 nA RM RM I = 1 A, 8/20 s, GND to I/O 20 pp V V CL I = 1 A, 8/20 s, I/O to GND 28 pp CV = 0 V, F = 1 MHz, V = 30 mV 4.5 5.5 pF I/O osc I/O to GND 0.36 Dynamic resistance, R d pulse width 100 ns GND to I/O 0.28 Note: For component test in its final application, the minimum clamping voltage has to be 20 V on V (GND to I/O) and 25 V on V (I/O to GND). BR1 BR2 2/10 DocID022192 Rev 3