TTVS VS Diode ArDiode Arrraaysys (SP(SPAA Diodes)Diodes) Lightning Surge Protection- SP4042 Series SP4042 Series 3.3V Diode Array RoHS Pb GREEN Description The SP4042 integrates low capacitance steering diodes with a TVS diode to provide 2 channels of protection against lightning induced surge events and ESD. This robust device can safely absorb up to 120A per IEC61000- 4-5 (t = 2/10s) without performance degradation and P a minimum 30kV ESD per IEC61000-4-2 international standard. The low loading capacitance makes the SP4042 ideal for protecting Ethernet interfaces. Pinout Features 1324 5 ESD , IEC61000-4-2, L ow capacitance of 11pF 30kV contact, 30kV air (TYP) per line Lightning, IEC61000- L ow leakage current of 4-5 2nd edition, 120A 0.1A (MAX) at 3.3V GND (t =2/10s) P L ead-free and RoHS EFT , IEC61000-4-4, 40A compliant (t =5/50ns) P 10 9 8 7 6 Functional Block Diagram Applications 10/100/1000 Ethernet Carrier Class Equipment Interfaces PBX Systems Customer Premise Equipment (CPE) Life Support Note: Not Intended for Use in Life Support or Life Saving Applications The products shown herein are not designed for use in life sustaining or life saving applications unless otherwise expressly indicated. 2016 Littelfuse, Inc. Specifications are subject to change without notice. Revision: 01/29/16 TTVS VS Diode ArDiode Arrraaysys (SP(SPAA Diodes)Diodes) Lightning Surge Protection- SP4042 Series Absolute Maximum Ratings Thermal Information Parameter Rating Units Symbol Parameter Value Units Storage Temperature Range -55 to 150 C I Peak Current (t =8/20s) 95 A PP p Maximum Junction Temperature 150 C I Peak Current (t =2/10s) 120 A PP p Maximum Lead Temperature 260 C P Peak Pulse Power (t =2/10s) 2500 W PK p (Soldering 20-40s) T Operating Temperature -40 to 85 C OP T Storage Temperature -55 to 150 C STOR CAUTION: Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Electrical Characteristics (T =25C) OP Parameter Symbol Test Conditions Min Typ Max Units Reverse Standoff Voltage V I 1A, Line to Line 3.3 V RWM R Reverse Breakdown Voltage V I =1mA, Line to Line 3.5 V BR T Snap Back Voltage V I =50mA 2.8 V SB SB Reverse Leakage Current I V =3.3V, Line to Line 0.1 A LEAK R 1 Clamp Voltage, Line to GND I =100A, t =2/10s 17 22 V PP p V C 1 Clamp Voltage, Line to Line I =100A, t =2/10s 22 25 V PP p IEC61000-4-2 (Contact) 30 kV 1 ESD Withstand Voltage V ESD IEC61000-4-2 (Air) 30 kV 2 Dynamic Resistance, Line to GND 0.05 R TLP, t =100ns DYN p 2 Dynamic Resistance, Line to Line 0.15 C Line to GND, V =0V, f=1MHz 11 25 pF I/O-GND R 1 Diode Capacitance C Line to Line, V =0V, f=1MHz 5.5 12 pF I/O-I/O R Note: 1 Parameter is guaranteed by design and/or device characterization. 2 Transmission Line Pulse (TLP) test setting : Std.TDR(50),tp=100ns, tr=0.2ns ITLP and VTLP averaging window: star t1=70ns to end t2=80ns Wave Form 2/10s Clamping Voltage vs. Peak Pulse Capacitance vs. Reverse Bias(Line to GND) Crrent (Line to GND) 29 25.0 26 23 20.0 20 17 15.0 14 11 10.0 8 5.0 5 70 80 90 100 110 120 00.3 0.60.9 1.21.5 1.82.1 2.42.7 33.3 Peak Pulse Current-I (A) PP Bias Voltage (V) 2016 Littelfuse, Inc. Specifications are subject to change without notice. Revision: 01/29/16 Clamp Voltage (V ) C Capacitance (pF) SP4061