ESDALC6-4N4 STMicroelectronics

ESDALC6-4N4 ESD array with low capacitance Datasheet production data Features Stand-off voltage 7 V Very low capacitance: 9.5 pF Small package: 1.0 x 0.8 mm Very thin package: 0.40 mm max QFN-4L Low leakage current: 70 nA at 25 C Benefits Figure 1. Functional diagram (top view) High ESD protection level High integration suitable for high speed interface Complies with the following standards I/O4 I/O1 IEC 61000-4-2: 15 kV (air discharge) GND 8 kV (contact discharge) MIL STD 883G- Method 3015-7: class3B: I/O2 I/O3 >25 kV (human body model) Applications Where transient overvoltage protection and electrical overstress protection in sensitive equipment is required, such as: Communication systems Cellular phone handsets and accessories Video equipment Portable equipment Description The ESDALC6-4N4 is monolithic array designed to protect up to 4 lines against ESD transients. It has been designed specifically for the protection of the high speed interface of integrated circuits in portable equipment and miniaturized electronics devices. The QFN-4L package minimizes PCB space. September 2012 Doc ID 022191 Rev 2 1/11 This is information on a product in full production. www.st.com 11Characteristics ESDALC6-4N4 1 Characteristics Table 1. Absolute maximum ratings (T = 25 C) amb Symbol Parameter Value Unit V ESD IEC 61000-4-2, level 4 (contact discharge) 11 kV PP (1) P T initial = T 27 W PP Peak pulse power dissipation (8/20 s) j amb I Repetitive peak pulse current typical value (8/20 s) 2.3 A pp T Maximum junction temperature 125 C j T Storage temperature range -55 + 150 C stg 1. For a surge greater than the maximum values, the diode will fail in short-circuit. Figure 2. Electrical characteristics (definitions) I I F Symbol Parameter V = Breakdown voltage BR I = Leakage current V RM RM VF V = Stand-off voltage V V V RM CL BR RM V V = Clamping voltage I RM CL I = Peak pulse current PP Slope: 1/R d I PP Table 2. Electrical characteristics (values, T = 25 C) amb Symbol Test conditions Min. Typ. Max. Unit V I = 1 mA 6 V BR R I V = 3 V 70 nA RM RM V I = 1 A, 8/20 s 10 V CL pp CV = 0 V, F = 1 MHz, V = 30 mV 9.5 11 pF R osc 2/11 Doc ID 022191 Rev 2