ESDALC6V1-5M6 STMicroelectronics

ESDALC6V1-5M6 5-line low capacitance Transil arrays for ESD protection Datasheet - production data Applications Where transient overvoltage protection in ESD sensitive equipment is required, such as: Computers Printers Communication systems Cellular phone handsets and accessories Micro QFN package Video equipment Description The ESDALC6V1-5M6 is a monolithic array designed to protect up to 5 lines against ESD Features transients. The device is ideal for applications where both High ESD protection level reduced print circuit board space and power High integration absorption capability are required. Suitable for high density boards Figure 1. Functional diagram 5 unidirectional Transil diodes Breakdown voltage V = 6.1 V min. BR Low diode capacitance (12 pF typ at 0 V) ESDALC6V1-5M6 Low leakage current < 70 nA Very small PCB area: 1.45 mm 500 microns pitch I/O1 1 6 I/O5 Lead-free package GND 2 5 I/O4 Complies with the following standards IEC 61000-4-2 4 I/O3 I/O2 3 15 kV (air discharge) 8 kV (contact discharge) MIL STD 883G- Method 3015-7: class3B >8 kV (human body model) TM: Transil is a trademark of STMicroelectronics October 2015 DocID11648 Rev 8 1/12 This is information on a product in full production. www.st.comCharacteristics ESDALC6V1-5M6 1 Characteristics Table 1. Absolute maximum ratings (T = 25 C) amb Symbol Parameter Value Unit ESD IEC 61000-4-2, air discharge 15 V ESD IEC 61000-4-2, contact discharge 8 kV PP MIL STD 883G- Method 3015-7: class3B, (human body model) 25 (1) P T initial = T 30 W PP Peak pulse power dissipation (8/20 s) j amb I Repetitive peak pulse current typical value (8/20 s) 3 A pp T Junction temperature 125 C j T Storage temperature range -55 to +150 C stg T Maximum lead temperature for soldering during 10 s 260 C L T Operating temperature range -40 to +125 C OP 1. For a surge greater than the maximum values, the diode will fail in short-circuit. Figure 2. Electrical characteristics (definition) , 6 PERO 3 DUDPHWHU , ) 9 OWDJH ZQ YR %UHDNGR %5 , /HDNDJH FXUUHQW 9 50 50 9 OWDJH I 6WDQG RI YR 50 9 ) 9 OWDJH &ODPSLQJ YR &/ 9 9 9 &/ %5 50 , HDN SXOVH FXUUHQW 3 33 9 , 50 , DUG FXUUHQW )RUZ ) 9 OWDJH DUG YR RUZ ) ) 5 QDPLF LPSHGDQFH G & /LQH FDSDFLWDQFH /,1( G , 33 Table 2. Electrical characteristics (value T = 25 C) amb Symbol Test condition Min. Typ. Max. Unit V I = 1 mA 6.1 7.2 V BR R I V = 3 V 70 nA RM RM V I = 10 mA 1 V F F R 3 d (1) -4 T I = 1 mA 2 5 10 / C R CV =0 V DC, F = 1 MHz, V = 30 mV 12 15 pF R osc RMS 1. V = T * (T - 25 C) * V (25 C) BR amb BR 2/12 DocID11648 Rev 8 5 6ORSH