ESDA6V1-5M6 STMicroelectronics

ESDA6V1M6, ESDA6V1-5M6 4- and 5-line Transil arrays for ESD protection Features High ESD protection level High integration Suitable for high density boards 4 unidirectional Transil diodes Micro QFN package (ESDA6V1M6) 5 unidirectional Transil diodes Figure 1. Functional diagram (ESDA6V1-5M6) Breakdown Voltage V = 6.1 V min BR ESDA6V1M6 High peak power dissipation: 100 Watts 8/20 s 1 I/O1 6 I/O5 Low leakage current < 500 nA GND 2 5 GND Low diode capacitance (70 pF typ at 0 V) 4 I/O3 I/O2 3 Very small PCB area: 1.45 mm 500 microns pitch ESDA6V1-5M6 Lead-free package Complies with the following standards: 1 I/O1 6 I/O5 IEC 61000-4-2 GND 2 5 I/O4 15 kV (air discharge) 4 I/O3 I/O2 3 8 kV (contact discharge) MIL STD 883G- Method 3015-7: class 3B > 8 kV (human body model) Description Applications The ESDA6V1xxM6 are monolithic arrays designed to protect up to 4 or 5 lines against ESD Where transient overvoltage protection in ESD transients. sensitive equipment is required, such as: The device is ideal for applications where both Computers reduced print circuit board space and power Printers absorption capability are required. Communication systems Cellular phone handsets and accessories Video equipment TM: Transil is a trademark of STMicroelectronics February 2008 Rev 4 1/11 www.st.com 11Characteristics ESDA6V1M6, ESDA6V1-5M6 1 Characteristics Table 1. Absolute maximum ratings (T = 25 C) amb Symbol Parameter Value Unit ESD IEC 61000-4-2, air discharge 15 V ESD IEC 61000-4-2, contact discharge 11 kV PP MIL STD 883G- Method 3015-7: class 3B, (human body model) 25 (1) P T initial = T 100 W Peak pulse power dissipation (8/20 s) PP j amb I Repetitive peak pulse current typical value (8/20 s) 8 A pp T Junction temperature 125 C j T Storage temperature range -55 to +150 C stg Maximum lead temperature for soldering during 10 s at 5 mm for T 260 C L case T Operating temperature range -40 to +125 C OP 1. For a surge greater than the maximum values, the diode will fail in short-circuit. Table 2. Electrical characteristics (T = 25 C) amb Symbol Parameter I V Stand-off voltage RM I F V Breakdown voltage BR V Clamping voltage CL V VV V F CL BR RM VVVVVV I RM I Leakage current V RM RM I R I Peak pulse current PP Slope= 1/R d I PP T Voltage temperature coefficient V Forward voltage drop F Symbol Test Condition Min Typ Max Unit V I = 1 mA 6.1 7.2 V BR R I V = 3 V 500 nA RM RM V I = 10 mA 1 V F F R 1 d (1) -4 I = 1 mA 5 T 10 / C R CV =0 V DC, F = 1 MHz, V = 30 mV 70 pF R osc RMS 1. V = T * (T - 25 C) * V (25 C) BR amb BR 2/11