ESDA6V1-5T6 STMicroelectronics

ESDA6V1-5T6 Transil arrays for ESD protection Features 5 unidirectional Transil diodes Breakdown voltage V = 6.1 V min. BR Low leakage current < 200 nA Very small PCB area: 1.0 mm 350 m pitch micro-package Lead-free and RoHS package Micro DFN package 1.0 x 1.0-6L High ESD protection level High integration Figure 1. Functional diagram (top view) Suitable for high density boards Complies with the following standards IEC 61000-4-2 level 4: 15 kV (air discharge) 8 kV (contact discharge) MIL STD 883G- Method 3015-7: class 3B: HBM (human body model) Applications Where transient overvoltage protection in ESD sensitive equipment is required, such as: Cellular phone handsets and accessories Computers Printers Communication systems Video equipment Set top boxes Description The ESDA6V1-5T6 is monolithic arrays designed to protect up to 5 lines against ESD transients. The device is ideal for applications where both reduced print circuit board space and high ESD protection level are required. TM: Transil is a trademark of STMicroelectronics March 2011 Doc ID 16855 Rev 2 1/11 www.st.com 11 Obsolete Product(s) - Obsolete Product(s)Characteristics ESDA6V1-5T6 1 Characteristics Table 1. Absolute maximum ratings (T = 25 C) amb Symbol Parameter Value Unit ESD IEC 61000-4-2, air discharge 15 V kV PP ESD IEC 61000-4-2, contact discharge 8 (1) P T initial = T 35 W Peak pulse power dissipation (8/20 s) PP j amb I Repetitive peak pulse current typical value (8/20 s) 3 A pp T Junction temperature 125 C j T Storage temperature range -55 + 150 C stg T Maximum lead temperature for soldering during 10 s 260 C L 1. For a surge greater than the maximum values, the diode will fail in short-circuit. Figure 2. Electrical characteristics (definitions) I I F Symbol Parameter V = Breakdown voltage BR I = Leakage current V RM RM VF V = Stand-off voltage V V V RM CL BR RM V I RM Slope: 1/R d I PP Table 2. Electrical characteristics (values, T = 25 C) amb Symbol Test conditions Min. Typ. Max. Unit V I = 1 mA 6.1 7.2 V BR R I V = 3 V 200 nA RM RM CV = 3 V DC, F = 1 MHz, V = 30 mV rms 34 70 pF R osc osc 2/11 Doc ID 16855 Rev 2 Obsolete Product(s) - Obsolete Product(s)