ESDALCL5-1BM2 STMicroelectronics

ESDALCL5-1BM2 Single-line low capacitance and low leakage current ESD protection Datasheet production data Features Single-line low capacitance Transil diode Bidirectional ESD protection Breakdown voltage V = 5.0 V min. BR Low diode capacitance (26 pF typ at 0 V) Low leakage current: 10 nA at 3 V 1 nA at 1 V SOD882 ESDALC5-1BM2 Very small PCB area: 0.6 mm ECOPACK 2 compliant components Figure 1. Functional diagram Complies with the following standards: IEC 61000-4-2 level 4 and higher 30 kV (air discharge) I/O1 30 kV (contact discharge) MIL STD 883G - Method 3015-7: class 3 Human body model I/O2 Applications Where transient overvoltage protection in ESD sensitive equipment is required, such as: Portable multimedia players and accessories Description Portable healthcare equipment The ESDALCL5-1BM2 is a bidirectional single- Notebooks line TVS diode designed to protect data lines or Communication systems other I/O ports against ESD transients. Cellular phone handsets and accessories This device is ideal for applications where reduced line capacitance and board space saving are required. Its low leakage current makes it suitable for portable equipment. October 2012 Doc ID 023846 Rev 1 1/12 This is information on a product in full production. www.st.com 12Characteristics ESDALCL5-1BM2 1 Characteristics Table 1. Absolute maximum ratings (T = 25 C) amb Symbol Parameter Value Unit IEC 61000-4-2 contact discharge V Peak pulse voltage 30 kV PP IEC 61000-4-2 air discharge (1) P Peak pulse power dissipation (8/20 s) T initial = T 150 W PP j amb I Peak pulse current (8/20 s) 9 A PP T Junction temperature -55 to +150 C j T Storage temperature range -65 to +150 C stg T Maximum lead temperature for soldering during 10 s 260 C L 1. For a surge greater than the maximum values, the diode will fail in short-circuit. Figure 2. Electrical characteristics (definitions) I Symbol Parameter V = Breakdown voltage BR V = Clamping voltage CL I = Leakage current at V RM RM V = Stand-off voltage RM IR I = Peak pulse current VBR VRM IRM PP V I = Breakdown current IRM VRM VBR R IR C = Input capacitance per line line Table 2. Electrical characteristics (values, T = 25 C) amb Symbol Test condition Min. Typ. Max. Unit From pin1 to pin2, I = 1 mA 11 13 R V V BR From pin2 to pin1, I = 1 mA 5 8 R V = 3 V 10 RM I nA RM V = 1 V 1 RM R Square pulse, I = 1 A, t = 2.5 s 650 m d PP p C F = 1 MHz, V = 0 V 26 30 pF line R 2/12 Doc ID 023846 Rev 1