ESDALC5-1BM2 STMicroelectronics

ESDALC5-1BM2, ESDALC5-1BT2 TM Single line low capacitance Transil , transient surge voltage suppressor (TVS) for ESD protection Datasheet - production data Complies with the following standards IEC 61000-4-2 (exceeds level 4) 30 kV (air discharge) 30 kV (contact discharge) MIL STD 883G - Method 3015-7: class 3 Human body model Description The ESDALC5-1BM2 (SOD882) and ESDALC5-1BT2 (SOD882T) are bidirectional SOD882 SOD882T single-line TVS diodes designed to protect data lines or other I/O ports against ESD transients. These devices are ideal for applications where both reduced line capacitance and board space Features saving are required. Single line low capacitance Transil diode Figure 1: Functional diagram Bidirectional ESD protection Breakdown voltage VBR = 5.8 V min Low diode capacitance (26 pF typ. at 0 V) Low leakage current < 60 nA at 5 V Very small PCB area: 0.6 mm I/O1 Applications Where transient overvoltage protection in ESD sensitive equipment is required, such as: I/O2 Computers Printers Communication systems Cellular phone handsets and accessories Video equipment TM: Transil is a trademark of Benefits STMicroelectronics High ESD protection level High integration Suitable for high density boards Lead-free packages ECOPACK 2 compliant components November 2016 DocID16936 Rev 6 1/13 www.st.com This is information on a product in full production. Characteristics ESDALC5-1BM2, ESDALC5-1BT2 1 Characteristics Table 1: Absolute maximum ratings (Tamb = 25 C) Symbol Parameter Value Unit IEC 61000-4-2: VPP Peak pulse voltage Contact discharge 30 kV Air discharge 30 P Peak pulse power 8/20s, T initial = T 150 W PP j amb IPP Peak pulse current 8/20s 9 A T Storage temperature range -65 to +150 stg Tj Junction temperature -55 to +150 C T Maximum lead temperature for soldering during 10 s 260 L Figure 2: Electrical characteristics (definitions) Table 2: Electrical characteristics (Tamb = 25 C) Symbol Test condition Min. Typ. Max. Unit From I/O1 to I/O2, IR = 1 mA 11 13 17 V V BR From I/O2 to I/O1, IR = 1 mA 5.8 8 11 IRM VRM = 5 V 60 nA Dynamic resistance, pulse width 100 ns 0.25 Rd From I/O1 to I/O2 0.23 From I/O2 to I/O1 Cline F = 1 MHz, VR = 0 V 26 30 pF 8 kV contact discharge after 30 ns IEC 61000 4-2 16 V From I/O1 to I/O2 V CL 11 From I/O2 to I/O1 2/13 DocID16936 Rev 6