ESDALC6V1-1U2 STMicroelectronics

ESDALC6V1-1U2 Single-line low capacitance Transil for ESD protection Features Breakdown voltage V = 6.1 V min. BR Unidirectional device Multiple ESD strike sustainability Very low diode capacitance: 12 pF typ. at 0 V Low leakage current 0201 SMD package size compatible 2 Ultra small PCB area: 0.18 mm Pin 1 available in different forms RoHS compliant ST0201 package Benefits High ESD protection level High integration Figure 1. Functional diagram (top view) Suitable for high density boards MSL1 Complies with the following standards: IEC 61000-4-2 level 4 Applications Where transient overvoltage protection in ESD sensitive equipment is required, such as: Portable multimedia players and accessories Notebooks Digital cameras and camcorders Description Communication systems The ESDALC6V1-1U2 is a unidirectional single Cellular phone handsets and accessories line TVS diode designed to protect the data lines or other I/O ports against ESD transients. The device is ideal for applications where both reduced line capacitance and board space saving are required. TM: Transil is a trademark of STMicroelectronics September 2011 Doc ID 15089 Rev 3 1/11 www.st.com 11Characteristics ESDALC6V1-1U2 1 Characteristics Table 1. Absolute maximum ratings (T = 25 C) amb Symbol Parameter Value Unit Peak pulse voltage: V kV PP IEC 61000-4-2 contact discharge 8 (1) P Peak pulse power dissipation (8/20 s) T = T 20 W PP j initial amb I Peak pulse current (8/20 s) 2 A PP T Junction temperature 125 C j T Storage temperature range - 55 to +150 C stg T Maximum lead temperature for soldering during 10 s 260 C L T Operating junction temperature range -40 to +125 C op 1. For a surge greater than the maximum values, the diode will fail in short-circuit Figure 2. Electrical characteristics (definitions) I Symbol Parameter I F V = Breakdown voltage BR V = Clamping voltage CL I = Leakage current V RM RM V = Stand-off voltage VF RM V CL VBR VRM V I = Forward current F IRM I R I = Peak pulse current PP I = Breakdown current R V = Forward voltage drop F Slope = 1/R d R = Dynamic impedance d IPP T = Voltage temperature Table 2. Electrical characteristics (values, T = 25 C) amb Symbol Test conditions Min. Typ. Max. Unit V I = 1 mA 6.1 8.0 V BR R I V = 3 V 100 nA RM RM R Square pulse, I = 1 A t = 2.5 s 1.3 d PP p -4 T V = T(T - 25 C) x V (25 C) 4.5 10 /C BR amb BR C V = 0 V, F = 1 MHz, V = 30 mV 12.0 pF line R osc osc 2/11 Doc ID 15089 Rev 3