ESDA8V2-1MX2 STMicroelectronics

ESDA8V2-1MX2 EOS and ESD Transil protection for charger and battery port Features Breakdown voltage V = 8.2 V BR Unidirectional device High peak power dissipation: 500 W (8/20 s waveform) ESD protection level better than IEC 61000-4-2, level 4: 30 kV contact discharge Low leakage current (< 0.5 A 5 V) QFN 2L package 2 Very small PCB area (1.45 mm ) RoHS compliant Figure 1. Functional diagram (top view) Benefits High EOS and ESD protection level High integration Suitable for high density boards Tiny package Complies with the following standards: IEC 61000-4-2 level 4 15 kV (air discharge) 8 kV (contact discharge) MIL STD 883G - Method 3015-7: class 3B HBM (human body model): 8kV Description Applications The ESDA8V2-1MX2 is a unidirectional single line Where EOS and ESD transient overvoltage Transil diode designed specifically for the protection in sensitive equipment is required, protection of integrated circuits in portable such as: equipment and miniaturized electonic devices subject to EOS and ESD transient overvoltages. Computers Printers Communication systems Cellular phone handsets and accessories Video equipment TM: Transil is a trademark of STMicroelectronics August 2008 Rev 1 1/10 www.st.comCharacteristics ESDA8V2-1MX2 1 Characteristics Table 1. Absolute maximum ratings (T = 25 C) amb Symbol Parameter Value Unit ESD discharge: IEC 61000-4-2 air discharge on input pin 30 V kV PP IEC 61000-4-2 contact discharge on input pin 30 MIL STD 883G - Method 3015-7: class 3B 30 (1) P Peak pulse power dissipation (8/20 s) T = T 500 W PP j initial amb I Peak pulse current (8/20 s) 27 A PP T Junction temperature range -40 to +125 C j T Storage temperature range - 55 to +150 C stg T Maximum lead temperature for soldering during 10 s 260 C L 1. For a surge greater than the maximum values, the diode will fail in short-circuit Table 2. Electrical characteristics (definitions) I Symbol Parameter I V Breakdown voltage F BR I Leakage current V RM RM V Stand-of voltage V VV V F RM CL BR RM VVVVVV I RM V Clamping voltage CL I R I Peak pulse current PP Slope= 1/R d I C Input line capacitance PP line Table 3. Electrical characteristics (values, T = 25 C) amb Symbol Test Condition Min Typ Max Unit V I = 1 mA 8.2 V BR R I V = 5 V 0.1 0.5 A RM RM I = 1 A (8/20 s waveform) 12 V PP V I = 5 A (8/20 s waveform) 13 V CL PP I = 27 A (8/20 s waveform) 18.5 V pp C V = 0 V, F = 1 MHz, V = 30 mV 350 430 pF line R osc osc 2/10