ESD Protection Diode MicroPackaged Diodes for ESD Protection ESD7381 The ESD7381 is designed to protect voltage sensitive components that require ultralow capacitance from ESD and transient voltage events. Excellent clamping capability, low capacitance, low leakage, and fast response time, make these parts ideal for ESD protection on www.onsemi.com designs where board space is at a premium. Because of its low capacitance, it is suited for use in high frequency designs such as 1 2 USB 2.0 high speed and antenna line applications. Cathode Anode Features UltraLow Capacitance: 0.37 pF MARKING Low Clamping Voltage DIAGRAM Small Body Outline Dimensions: 0.60 mm x 0.30 mm PIN 1 Low Body Height: 0.3 mm X3DFN2 E Standoff Voltage: 3.3 V M CASE 152AF Low Leakage Insertion Loss: 0.030 dBm E = Specific Device Code M = Date Code Response Time is < 1 ns Low Dynamic Resistance < 1 IEC6100042 Level 4 ESD Protection ORDERING INFORMATION These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant Device Package Shipping ESD7381MUT5G X3DFN2 10000 / Tape & Typical Applications (PbFree) Reel RF Signal ESD Protection For information on tape and reel specifications, RF Switching, PA, and Antenna ESD Protection including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Near Field Communications Brochure, BRD8011/D. MAXIMUM RATINGS Rating Symbol Value Unit IEC 6100042 (ESD) Contact 20 kV Air 20 Total Power Dissipation on FR5 Board P 250 mW D (Note 1) T = 25C A Thermal Resistance, JunctiontoAmbient R 400 C/W JA Junction and Storage Temperature Range T , T 40 to +125 C J stg Lead Solder Temperature Maximum T 260 C L (10 Second Duration) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR5 = 1.0 x 0.75 x 0.62 in. See Application Note AND8308/D for further description of survivability specs. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: May, 2021 Rev. 8 ESD7381/DESD7381 ELECTRICAL CHARACTERISTICS I (T = 25C unless otherwise noted) A I F Symbol Parameter I Maximum Reverse Peak Pulse Current PP V Clamping Voltage I C PP V V V V Working Peak Reverse Voltage C BR RWM RWM V I V R F I Maximum Reverse Leakage Current V I R RWM T V Breakdown Voltage I BR T I Test Current T *See Application Note AND8308/D for detailed explanations of I PP datasheet parameters. UniDirectional ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) A Parameter Symbol Conditions Min Typ Max Unit Reverse Working Voltage V 3.3 V RWM Breakdown Voltage (Note 2) V I = 1 mA 5.0 V BR T Reverse Leakage Current I V = 3.3 V < 1.0 50 nA R RWM Clamping Voltage (Note 3) V I = 1 A 8.0 V C PP Clamping Voltage (Note 3) V I = 3 A 10 V C PP ESD Clamping Voltage V Per IEC6100042 See Figures 1 and 2 C Junction Capacitance C V = 0 V, f = 1 Mhz 0.37 0.55 pF J R V = 0 V, f < 1 GHz 0.25 0.55 R Dynamic Resistance R TLP Pulse 0.32 DYN Insertion Loss f = 1 Mhz 0.030 dB f = 8.5 GHz 0.573 2. Breakdown voltage is tested from pin 1 to 2. 3. Nonrepetitive current pulse at T = 25C, per IEC6100045 waveform. A Figure 1. ESD Clamping Voltage Screenshot Figure 2. ESD Clamping Voltage Screenshot Positive 8 kV Contact per IEC6100042 Negative 8 kV Contact per IEC6100042 www.onsemi.com 2