ESD Protection Diode UltraLow Capacitance MicroPackaged Diodes for ESD Protection ESD7462, SZESD7462 The ESD7462 is designed to protect voltage sensitive components that require ultralow capacitance from ESD and transient voltage events. It has industry leading capacitance linearity over voltage www.onsemi.com making it ideal for RF applications. This capacitance linearity combined with the extremely small package and low insertion loss makes this part well suited for use in antenna line applications for wireless handsets and terminals. Features Industry Leading Capacitance Linearity Over Voltage UltraLow Capacitance: 0.3 pF Typ MARKING Insertion Loss: 0.05 dB at 1 GHz 0.10 dB at 3 GHz DIAGRAM Low Leakage: < 1 nA Typ X2DFN2 Protection for the following IEC Standards: 4 M CASE 714AB IEC6100042 (ESD): Level 4 IEC6100044 (EFT): 40 A 5/50 ns 4 = Specific Device Code IEC6100045 (Lightning): 1 A (8/20 s) M = Date Code Protection for ISO 10605 (ESD) SZESD7462MXWT5G Wettable Flank Package for Optimal X2DFNW2 Automated Optical Inspection (AOI) E M CASE 711BG SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ101 Qualified and E = Specific Device Code PPAP Capable M = Date Code These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant Typical Applications ORDERING INFORMATION RF Signal ESD Protection Device Package Shipping RF Switching, PA, and Antenna ESD Protection Near Field Communications ESD7462N2T5G X2DFN2 8000 / Tape & (PbFree) Reel USB 2.0, USB 3.0 SZESD7462N2T5G X2DFN2 8000 / Tape & MAXIMUM RATINGS (T = 25C unless otherwise noted) (PbFree) Reel A Rating Symbol Value Unit SZESD7462MXWT5G X2DFNW2 8000 / Tape & (PbFree) Reel IEC 6100042 Contact (Note 1) ESD 18 kV IEC 6100042 Air 18 For information on tape and reel specifications, ISO 10605 Contact (330 pF / 330 ) 13 including part orientation and tape sizes, please ISO 10605 Contact (330 pF / 2 k ) 29 refer to our Tape and Reel Packaging Specifications ISO 10605 Contact (150 pF / 2 k ) 30 Brochure, BRD8011/D. Total Power Dissipation (Note 2) T = 25C P 300 mW A D Thermal Resistance, JunctiontoAmbient R 400 C/W JA Junction and Storage Temperature Range T , T 55 to C J stg +150 Lead Solder Temperature Maximum T 260 C L (10 Second Duration) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Nonrepetitive current pulse at T = 25C, per IEC6100042 waveform. A 2. Mounted with recommended minimum pad size, DC board FR4 Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: April, 2020 Rev. 4 ESD7462/DESD7462, SZESD7462 ELECTRICAL CHARACTERISTICS I (T = 25C unless otherwise noted) A I PP Symbol Parameter I Maximum Reverse Peak Pulse Current PP I T I V Clamping Voltage I V V V R C PP C BR RWM V I V V V R RWM BR C V Working Peak Reverse Voltage RWM I T I Maximum Reverse Leakage Current V R RWM V Breakdown Voltage I BR T I PP I Test Current T BiDirectional *See Application Note AND8308/D for detailed explanations of datasheet parameters. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Parameter Symbol Condition Min Typ Max Unit Reverse Working Voltage V 16 V RWM Breakdown Voltage V I = 1 mA (Note 3) 16.5 22 28 V BR T Reverse Leakage Current I V = 5 V 100 nA R RWM Clamping Voltage V IEC 6100042, 8 kV Contact See Figures 1 and 2 V C Clamping Voltage, TLP (Note 4) V I = 8 A 34 V C PP I = 16 A 47 PP Dynamic Resistance R TLP Pulse 1.6 DYN Junction Capacitance C V = 0 V, f = 1 MHz 0.30 0.55 pF J R V = 0 V, f = 1 GHz 0.25 0.55 R Insertion Loss f = 1 GHz 0.05 dB f = 3 GHz 0.10 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Breakdown voltage is tested from pin 1 to 2 and pin 2 to 1. 4. ANSI/ESD STM5.5.1 Electrostatic Discharge Sensitivity Testing using Transmission Line Pulse (TLP) Model. TLP conditions: Z = 50 , t = 100 ns, t = 4 ns, averaging window t = 30 ns to t = 60 ns. 0 p r 1 2 180 20 160 0 140 20 120 40 100 60 80 80 60 100 40 120 20 140 0 20 160 25 0 25 50 75 100 125 150 175 25 0 25 50 75 100 125 150 175 TIME (ns) TIME (ns) Figure 1. Typical IEC6100042 +8 kV Contact Figure 2. Typical IEC6100042 8 kV Contact ESD Clamping Voltage ESD Clamping Voltage www.onsemi.com 2 VOLTAGE (V) VOLTAGE (V)