DATA SHEET www.onsemi.com ESD Protection Diode UltraLow Capacitance MicroPackaged Diodes for ESD Protection MARKING ESD7410 DIAGRAM The ESD7410 is designed to protect voltage sensitive components that require ultralow capacitance from ESD and transient voltage X2DFN2 T M CASE 714AB events. It has industry leading capacitance linearity over voltage making it ideal for RF applications. This capacitance linearity T = Specific Device Code combined with the extremely small package and low insertion loss M = Date Code makes this part well suited for use in antenna line applications for wireless handsets and terminals. X2DFNW2 Features D M CASE 711BG UltraLow Capacitance: < 1.0 pF Max Industry Leading Capacitance Linearity Over Voltage D = Specific Device Code M = Date Code Insertion Loss: 0.1 dB at 1 GHz 0.3 dB at 3 GHz Low Leakage: < 1 A IEC6100042 (ESD): Level 4 30 kV Contact ORDERING INFORMATION ISO 10605 (ESD) 330 pF/2 k 30 kV Contact Device Package Shipping SZESD7410MXWT5G Wettable Flank Package for optimal Automated Optical Inspection (AOI) ESD7410N2T5G X2DFN2 8000 / Tape & (PbFree) Reel SZ Prefix for Automotive and Other Applications Requiring Unique SZESD7410N2T5G X2DFN2 8000 / Tape & Site and Control Change Requirements AECQ101 Qualified and (PbFree) Reel PPAP Capable ESD7410MXWT5G X2DFNW2 8000 / Tape & These Devices are PbFree, Halogen Free/BFR Free and are RoHS (PbFree) Reel Compliant SZESD7410MXWT5G X2DFNW2 8000 / Tape & Typical Applications (PbFree) Reel RF Signal ESD Protection For information on tape and reel specifications, Active Antenna ESD Protection including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Near Field Communications Brochure, BRD8011/D. MAXIMUM RATINGS (T = 25C unless otherwise noted) A Rating Symbol Value Unit IEC 6100042 Contact (Note 1) ESD 30 kV IEC 6100042 Air 30 kV ISO 10605 Contact (330 pF / 330 ) 30 kV ISO 10605 Contact (330 pF / 2 k ) 30 kV ISO 10605 Contact (150 pF / 2 k ) 30 kV Total Power Dissipation (Note 2) T = 25C P 300 mW A D Thermal Resistance, JunctiontoAmbient R 400 C/W JA Junction and Storage Temperature Range T , T 55 to C J stg +150 Lead Solder Temperature Maximum T 260 C L (10 Second Duration) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Nonrepetitive current pulse at T = 25C, per IEC6100042 waveform. A 2. Mounted with recommended minimum pad size, DC board FR4 Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: September, 2021 Rev. 7 ESD7410/DESD7410 ELECTRICAL CHARACTERISTICS I (T = 25C unless otherwise noted) A I PP Symbol Parameter I Maximum Reverse Peak Pulse Current PP I T I V Clamping Voltage I V V V R C PP C BR RWM V I V V V R RWM BR C V Working Peak Reverse Voltage RWM I T I Maximum Reverse Leakage Current V R RWM V Breakdown Voltage I BR T I PP I Test Current T BiDirectional *See Application Note AND8308/D for detailed explanations of datasheet parameters. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Parameter Symbol Condition Min Typ Max Unit Reverse Working Voltage V 9.5 V RWM Breakdown Voltage V I = 1 mA (Note 3) 10 V BR T Reverse Leakage Current I V = 9.5 V 1.0 A R RWM Clamping Voltage V IEC 6100042, 8 kV Contact See Figures 1 and 2 V C Clamping Voltage, TLP (Note 4) V I = 8 A 18 V C PP I = 16 A 20 PP I = 8 A 18 PP I = 16 A 20 PP Reverse Peak Pulse Current I IEC 6100042 (8/20 s) 5.0 A PP Clamping Voltage (8/20 s) V I = 5.0 A 18.4 19.4 V C PP Dynamic Resistance R TLP Pulse 1.0 DYN Junction Capacitance C V = 0 V, f = 1 MHz 0.40 1.0 pF J R V = 0 V, f = 1 GHz 0.35 0.7 R Insertion Loss f = 1 GHz 0.1 dB f = 3 GHz 0.3 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Breakdown voltage is tested from pin 1 to 2 and pin 2 to 1. 4. ANSI/ESD STM5.5.1 Electrostatic Discharge Sensitivity Testing using Transmission Line Pulse (TLP) Model. TLP conditions: Z = 50 , t = 100 ns, t = 4 ns, averaging window t = 30 ns to t = 60 ns. 0 p r 1 2 www.onsemi.com 2