ESDALC5-1BT2Y STMicroelectronics

ESDALC5-1BT2Y Automotive single-line low capacitance Transil, transient surge voltage suppressor (TVS) for ESD protection Datasheet production data Applications Where transient overvoltage protection in ESD sensitive equipment is required, such as: Automotive applications Computers Printers Communication systems Cellular phone handsets and accessories SOD882T ESDALC5-1BT2Y Video equipment Description Features The ESDALC5-1BT2Y is bidirectional single-line Single-line bidirectional protection TVS diode designed to protect data lines or other I/O ports against ESD transients. Breakdown voltage = 5.8 V min. This device is ideal for applications where both Low capacitance = 26 pF at 0 V printed circuit board space and power absorption Lead-free packages capability are required. ECOPACK 2 compliant component Figure 1. Functional diagram AEC-Q101 qualified Benefits I/O1 Low capacitance for optimized data integrity < 60 nA Low leakage current 2 Low PCB space consumption: 0.6 mm High reliability offered by monolithic integration I/O2 Complies with the following standards: IEC 61000-4-2 (exceeds level 4) 30 kV (air discharge) 30kV (contact discharge) ISO10605: C = 330 pF, R = 330 30kV (air discharge) 30kV (contact discharge) ISO 7637-3: Pulse 3a: V = -150 V S TM: Transil is a trademark of STMicroelectronics Pulse 3b: V = +100 V S February 2014 DocID025820 Rev 1 1/12 This is information on a product in full production. www.st.comCharacteristics ESDALC5-1BT2Y 1 Characteristics Table 1. Absolute maximum ratings (T = 25 C) amb Symbol Parameter Value Unit IEC 61000-4-2 contact discharge 30 IEC 61000-4-2 air discharge 30 V Peak pulse voltage ISO10605 contact discharge 30 kV PP ISO10605 air discharge 30 MIL STD 883G - Method 3015-7: class 3 25 P Peak pulse power dissipation (8/20 s) T initial = T 150 W PP j amb I Peak pulse current (8/20 s) 9 A PP T Operating junction temperature range - 50 to + 125 C OP T Storage temperature range - 65 to + 125 C stg T Maximum lead temperature for soldering during 10 s 260 C L Figure 2. Electrical characteristics (definitions) I Symbol Parameter V = Breakdown voltage BR R D V = Clamping voltage CL I = Leakage current V RM RM V V V V CL Trig BR RM V V = Stand-off voltage RM I I = Peak pulse current RM PP I = Breakdown current R V = Triggering voltage TRIG I C = Input capacitance per line R line R = Dynamic resistance D I PP Table 2. Electrical characteristics (values, T = 25 C) amb Symbol Test condition Min. Typ. Max. Unit From I/O1 to I/O2, I = 1 mA 11 13 17 R V V BR From I/O2 to I/O1, I = 1 mA 5.8 8 11 R I V = 5 V 60 nA RM RM Dynamic resistance, pulse width 100 ns R From I/O1 to I/O2 0.25 d From I/O2 to I/O1 0.23 8 kV contact discharge after 30 ns IEC 61000 4-2 V From I/O1 to I/O2 17.5 V CL From I/O2 to I/O1 12.5 C F = 1 MHz, V = 0 V 26 30 pF line R 2/12 DocID025820 Rev 1