ESDALCL6-4P6A STMicroelectronics

ESDALCL6-4P6A Multi-line low capacitance and low leakage current ESD protection Datasheet production data Features Diode array topology: 4 lines protection Low leakage current: 10 nA at 3 V 1 nA at 1 V SOT-666 Very low diode capacitance (2.5 pF max.) ESDALCL6-4P6A 5 V V protection CC ECOPACK 2 compliant components RoHS compliant Figure 1. Functional diagram Complies with the following standards: I/O4 VCC I/O3 IEC 61000-4-2 level 4 and higher: 30 kV (air discharge) 15 kV (contact discharge) MIL STD 883G - Method 3015-7: class 3B Human body model Applications Where transient overvoltage protection in ESD GND I/O2 I/O1 sensitive equipment is required, such as: Computer Description Portable healthcare equipment Printers The ESDALCL6-4P6A is an ESD protection array designed to protect data lines or other I/O ports Communication systems against ESD transients. Cellular phone handsets and accessories This device is ideal for applications where Video equipment reduced line capacitance, board space saving and low leakage currents are required. Its low leakage current makes it suitable for portable equipment where battery consumption is a key factor and in analog front end where low leakage currents are mandatory for measurements precision. October 2012 Doc ID 023869 Rev 1 1/7 This is information on a product in full production. www.st.com 7Characteristics ESDALCL6-4P6A 1 Characteristics Table 1. Absolute maximum ratings (T = 25 C) amb Symbol Parameter Value Unit IEC 61000-4-2 contact discharge 15 V Peak pulse voltage kV PP IEC 61000-4-2 air discharge 30 Peak pulse power dissipation (8/20 s) (1) P 90 W PP I/O to GND Peak pulse current (8/20 s) I 5A PP I/O to GND T Maximum junction temperature range -55 to +150 C j T Storage temperature range -65 to +150 C stg T Maximum lead temperature for soldering during 10 s 260 C L 1. For a surge greater than the maximum values, the diode will fail in short-circuit. Figure 2. Electrical characteristics (definitions) I Symbol Parameter I F V = Breakdown voltage BR V = Clamping voltage CL I = Leakage current at V RM RM V = Stand-off voltage RM V F V V V CL BR RM V I = Peak pulse current PP I RM I = Breakdown current R I = Forward current F C = Input capacitance per line line Slope = 1/Rd I PP Table 2. Electrical characteristics (values, T = 25 C) amb Symbol Test condition Min. Typ. Max. Unit V I = 1 mA 6 V BR R V = 3 V, I/O to GND 10 RM I nA RM V = 1 V, I/O to GND 1 RM C F = 1 MHz, V = 0 V 2.5 pF line R 2/7 Doc ID 023869 Rev 1