ESDARF01-1BM2 STMicroelectronics

ESDARF01-1BM2 ESD protection for AM and FM antenna Datasheet production data Features Single line bidirectional protection 2 Very low capacitance (3 pF typical) Lead-free package Very low capacitance, line to ground, for optimized data integrity 2 1 Low PCB space consumption: 0.6 mm max No insertion loss in AM and FM band High reliability offered by monolithic integration SOD-882 Complies with the following standards Figure 1. Functional diagram IEC 61000-4-2: 15 kV (air discharge) 8 kV (contact discharge) MIL STD 883G- Method 3015-7: class 3B: 1 Applications Where transient over voltage protection in ESD sensitive equipment is required, such as: 2 Portable audio systems Communication systems Cellular phone handsets and accessories Audio and video equipment Description The ESDARF01-1BM2 is a monolithic application specific device dedicated to ESD protection of the AM and FM antenna in cell phones and portable equipment. The device is ideal for applications where both reduced printed circuit board space and power absorption capability are required. June 2012 Doc ID 13462 Rev 3 1/11 This is information on a product in full production. www.st.com 11Characteristics ESDARF01-1BM2 1 Characteristics Table 1. Absolute maximum ratings Symbol Parameter Value Unit IEC 61000-4-2 contact discharge 8 (1) V Peak pulse voltage kV PP IEC 61000-4-2 air discharge 15 T Maximum operating junction temperature 125 C j T Storage temperature range - 55 to +150 C stg T Maximum lead temperature for soldering during 10 s at 5 mm for case 260 C L 1. For a surge greater than the maximum values, the diode will fail in short-circuit. Figure 2. Electrical characteristics (definitions) I Symbol Parameter V = Breakdown voltage BR V = Stand-off voltage RM V = Clamping voltage CL I = Leakage current V RM RM V V V CL BR RM I = Peak pulse current V PP IRM V V V RM BR CL Slope: 1/R d I PP Table 2. Electrical characteristics (values, T = 25 C) amb Value Unit Symbol Parameter Test conditions Min. Typ. Max. V Breakdown voltage I = 1 mA 0.7 1.0 1.3 V BR R I Leakage Current V = 100 mV 0.3 A RM RM V = 0 V, F = 1 MHz, R C Capacitance between I/O and GND 33.5 pF i/o-i/o any I/O pin to GND 2/11 Doc ID 13462 Rev 3