ESD7331 ESD Protection Diode MicroPackaged Diodes for ESD Protection The ESD7331 is designed to protect voltage sensitive components that require low capacitance from ESD and transient voltage events. Excellent clamping capability, low capacitance, low leakage, and fast www.onsemi.com response time, make these parts ideal for ESD protection on designs where board space is at a premium. Because of its low capacitance, the part is well suited for use in high frequency designs such as USB 2.0 1 2 Cathode Anode high speed applications. Features Low Capacitance 0.4 pF (Typ) MARKING DIAGRAM Low Clamping Voltage PIN 1 Small Body Outline Dimensions: 0.60 mm x 0.30 mm X3DFN2 Low Body Height: 0.3 mm M CASE 152AF Standoff Voltage: 3.3 V IEC6100042 Level 4 ESD Protection 6 = Specific Device Code These Devices are PbFree, Halogen Free/BFR Free and are RoHS (Rotated 180) Compliant M = Date Code Typical Applications USB 2.0/3.0 ORDERING INFORMATION MHL 2.0 Device Package Shipping eSATA ESD7331MUT5G X3DFN2 15000 / Tape & (PbFree) Reel MAXIMUM RATINGS Rating Symbol Value Unit For information on tape and reel specifications, including part orientation and tape sizes, please IEC 6100042 (ESD) Contact 15 kV refer to our Tape and Reel Packaging Specifications Air 15 Brochure, BRD8011/D. Total Power Dissipation on FR5 Board P 250 mW D (Note 1) T = 25C A Thermal Resistance, JunctiontoAmbient R 400 C/W JA Junction and Storage Temperature Range T , T 55 to +150 C J stg Lead Solder Temperature Maximum T 260 C L (10 Second Duration) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR5 = 1.0 x 0.75 x 0.62 in. See Application Note AND8308/D for further description of survivability specs. Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: October, 2017 Rev. 1 ESD7331/D 6ESD7331 ELECTRICAL CHARACTERISTICS I (T = 25C unless otherwise noted) A I PP Symbol Parameter I Maximum Reverse Peak Pulse Current PP I T I V Clamping Voltage I V V V R C PP C BR RWM V I V V V R RWM BR C V Working Peak Reverse Voltage RWM I T I Maximum Reverse Leakage Current V R RWM V Breakdown Voltage I BR T I PP I Test Current T BiDirectional *See Application Note AND8308/D for detailed explanations of datasheet parameters. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) A Parameter Symbol Conditions Min Typ Max Unit Reverse Working Voltage V 3.3 V RWM Breakdown Voltage (Note 2) V I = 1 mA 4.0 V BR T Reverse Leakage Current I V = 3.3 V 1.0 A R RWM Clamping Voltage (Note 3) V I = 1 A 7.5 V C PP ESD Clamping Voltage V Per IEC6100042 See Figures 1 and 2 C Junction Capacitance C V = 0 V, f = 1 MHz 0.4 0.75 pF J R Dynamic Resistance R TLP Pulse 0.26 DYN Insertion Loss f = 100 MHz 0.003 dB f = 8.5 GHz 1.79 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Breakdown voltage is tested from pin 1 to 2 and pin 2 to 1. 3. Nonrepetitive current pulse at T = 25C, per IEC6100045 waveform. A 160 10 140 0 120 10 100 20 80 30 60 40 40 50 20 60 0 20 70 20 0 20 40 60 80 100 120 140 20 0 20 40 60 80 100 120 140 TIME (ns) TIME (ns) Figure 1. ESD Clamping Voltage Positive 8 kV Figure 2. ESD Clamping Voltage Negative 8 kV Contact per IEC6100042 Contact per IEC6100042 www.onsemi.com 2 VOLTAGE (V) VOLTAGE (V)