ESD1L001, SZESD1L001 ESD Protection Diode Low Capacitance ESD Protection Diode for High Speed Data Line The ESD1L001 surge protection is designed to protect four high www.onsemi.com speed data lines from ESD. Ultralow capacitance and low ESD clamping voltage make this device an ideal solution for protecting voltage sensitive high speed data lines. The small form factor, MARKING flowthrough style package allows for easy PCB layout and matched DIAGRAM trace lengths necessary to maintain consistent impedance between 6 high speed differential lines such as USB 3.0 and HDMI. SC88 XXXM W1 SUFFIX Features CASE 419B 1 Low Capacitance (0.3 pF Typical, I/O to GND) 1 Short to Battery Survivability XXX = Specific Device Code Protection for the Following IEC Standards: M = Date Code IEC 6100042 Level 4 (ESD) = PbFree Package Low ESD Clamping Voltage (30 V Typical, +16 A TLP, I/O to GND) (Note: Microdot may be in either location) SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ101 Qualified and PIN CONFIGURATION PPAP Capable AND SCHEMATIC These Devices are PbFree and are RoHS Compliant Pin 1 Pin 2 Pin 4 Pin 5 Typical Applications USB2.0/3.0 LVDS HDMI High Speed Differential Pairs Pin 6 Pin 3 MAXIMUM RATINGS (T = 25C unless otherwise noted) J Rating Symbol Value Unit = Operating Junction Temperature Range T 55 to +125 C J Storage Temperature Range T 55 to +150 C stg Lead Solder Temperature T 260 C L Maximum (10 Seconds) ORDERING INFORMATION IEC 6100042 Contact ESD 8 kV Device Package Shipping IEC 6100042 Air 15 kV ESD1L001W1T2G SC88 3000 / Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be (PbFree) Tape & Reel assumed, damage may occur and reliability may be affected. SZESD1L001W1T2G SC88 3000 / (PbFree) Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: October, 2017 Rev. 1 ESD1L001/DESD1L001, SZESD1L001 ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) A Parameter Symbol Conditions Min Typ Max Unit Reverse Working V I/O Pin to GND 5 16 V RWM Voltage Breakdown Voltage V I = 1 mA, I/O Pin to GND 16.5 V BR T Reverse Leakage I V = 5 V, I/O Pin to GND 1 A R RWM Current Clamping Voltage V IEC6100042, 8 kV Contact See Figures 3 and 4 C (Note 1) Clamping Voltage TLP V I = 8 A 25 V C PP (Note 2) I = 16 A 30 PP I = 8 A 5.5 PP I = 16 A 10.8 PP Junction Capacitance C VR = 0 V, f = 1 MHz between Pin1 to GND and 5 10 % J Match Pin4 to GND Junction Capacitance C VR = 0 V, f = 1 MHz between I/O Pins 0.2 0.4 pF J Junction Capacitance C VR = 0 V, f = 1 MHz between I/O Pins and GND 0.3 0.5 pF J 3dB Bandwidth f R = 50 5 GHz BW L 1. For test procedure see Figures 5 and 6 and application note AND8307/D. 2. ANSI/ESD STM5.5.1 Electrostatic Discharge Sensitivity Testing using Transmission Line Pulse (TLP) Model. TLP conditions: Z = 50 , t = 100 ns, t = 4 ns, averaging window t = 30 ns to t = 60 ns. 0 p r 1 2 1.0 1E02 1E03 0.9 1E04 0.8 1E05 0.7 1E06 0.6 1E07 0.5 1E08 0.4 1E09 0.3 1E10 0.2 1E11 0.1 1E12 0 1E13 0 2 46 8 10 12 14 16 18 20 2224 02 4 6 8 10 12 14 VOLTAGE (V) VBias (V) Figure 1. Typical IV Characteristic Curve Figure 2. Typical CV Characteristic Curve 150 10 140 0 130 10 120 20 110 30 100 40 90 50 80 60 70 70 60 80 50 90 40 100 30 110 20 120 10 130 0 140 10 150 50 0 50 100 150 200 250 300 350 400 20 0 20 40 60 80 100 120 140 160 180 200 TIME (ns) TIME (ns) Figure 3. IEC6100042 +8 kV Contact ESD Figure 4. IEC6100042 8 kV Contact ESD Clamping Voltage Clamping Voltage www.onsemi.com 2 CURRENT (A) VOLTAGE (V) VOLTAGE (V) CAPACITANCE (pF)