PTVS3-015C-TH Bourns

Features Applications 3 kA, 8/20 s surge capability High power DC bus protection Low clamping voltage under surge Bidirectional TVS Excellent performance over temperature Model PTVS3-015C-TH High Current TVS Diode General Information The Model PTVS3-015C-TH high current bidirectional TVS diode is designed for use in high power DC bus clamping applications. This device offers bidirectional port protection. The device is RoHS* compliant and halogen free**. It also meets IEC 61000-4-5 8/20 s current surge requirements. Absolute Maximum Ratings ( T = 25 C Unless Otherwise Noted) A Rating Symbol Value Unit Repetitive Standoff Voltage V 15 V WM Peak Current Rating per 8/20 s IEC 61000-4-5 I 3kA PPM Operating Junction Temperature Range T -40 to +125 C J Storage Temperature Range T -55 to +150 C S Lead Temperature, Soldering (10 s) 260 C Electrical Characteristics ( T = 25 C Unless Otherwise Noted) A Parameter Test Conditions Min. Typ. Max. Unit I Standby Current V = V 10 A D D WM V Breakdown Voltage I = 10 mA 16 17.5 19 V (BR) BR (1) V Clamping Voltage per IEC61000-4-5 C I = 3 kA 28 V PP (8/20 s current waveform) V Temperature Coef cient 0.1 %/C (BR) F = 10 kHz, C Capacitance 7.5 nF V = 1 Vrms d (1) V measured at the time which is coincident with the peak surge current. C Asia-Paci c: Tel: +886-2 2562-4117 Fax: +886-2 2562-4116 EMEA: Tel: +36 88 520 390 Fax: +36 88 520 211 The Americas: Tel: +1-951 781-5500 Fax: +1-951 781-5700 www.bourns.com * RoHS Directive 2002/95/EC Jan. 27, 2003 including annex and RoHS Recast 2011/65/EU June 8, 2011. **Bourns considers a product to be halogen free if (a) the Bromine (Br) content is 900 ppm or less (b) the Chlorine (Cl) content is 900 ppm or less and (c) the total Bromine (Br) and Chlorine (Cl) content is 1500 ppm or less. Speci cations are subject to change without notice. The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time. Users should verify actual device performance in their speci c applications. *RoHS COMPLIANT Model PTVS3-015C-TH High Current TVS Diode Performance Graphs V-I Characteristic Percentage V Change vs. Junction Temperature BR 12 10 8 Normalized to 25 C 6 4 2 0 -2 -4 -6 -8 -10 -12 -40 -20 0 20 40 60 80 100 120 140 Junction Temperature (C) Typical Surge Current Derating 120 110 100 90 80 70 60 50 40 30 20 10 0 0 25 50 75 100 125 150 175 Ambient Temperature (C) This graph shows the typical device surge current derating versus ambient temperature when subjected to the 8/20 s current waveform per the IEC 61000-4-5 speci cation. This device is not intended for continuous operation at temperatures above 125 C. Speci cations are subject to change without notice. The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time. Users should verify actual device performance in their speci c applications. Percent of Rated Value V Change vs. Temperature (%) BR