PTVS3-076C-M Bourns

Features Applications n 3 kA, 8/20 s surge capability n High power DC bus protection n Low clamping voltage under surge n Bidirectional TVS n Surface mount package n Excellent overtemperature performance PTVS3-xxxC-M Series High Current TVS Diodes General Information Bourns Model PTVS3-xxxC-M high current bidirectional TVS diodes are designed for use in high power DC bus clamping applications. These devices offer bidirectional port protection and are available with standoff voltage ratings of 66 V and 76 V. The devices are RoHS* compliant and are designed to meet IEC 61000-4-5 8/20 s current surge requirements. Absolute Maximum Ratings ( T = 25 C Unless Otherwise Noted) A Rating Symbol Value Unit PTVS3-066C-M 66 Repetitive Standoff Voltage V V WM PTVS3-076C-M 76 Peak Current Rating per 8/20 s IEC 61000-4-5 I 3 kA PPM Operating Junction Temperature Range T -55 to +125 C J Storage Temperature Range T -55 to +150 C S Electrical Characteristics ( T = 25 C Unless Otherwise Noted) A Parameter Test Conditions Min. Typ. Max. Unit I Standby Current V = V 10 A D D WM PTVS3-066C-M 72 76 80 V Breakdown Voltage I = 10 mA V (BR) BR PTVS3-076C-M 85 90 95 PTVS3-066C-M 120 V Clamping Voltage I = 3 kA V C PP PTVS3-076C-M 135 V Temperature Coefficient 0.1 %/C (BR) F = 10 kHz, PTVS3-066C-M 2.0 C Capacitance nF V = 1 Vrms PTVS3-076C-M 1.7 d Asia-Pacific: Tel: +886-2 2562-4117 Email: asiacus bourns.com EMEA: Tel: +36 88 520 390 Email: eurocus bourns.com The Americas: Tel: +1-951 781-5500 Email: americus bourns.com www.bourns.com *RoHS Directive 2002/95/EC Jan. 27, 2003 including annex and RoHS Recast 2011/65/EU June 8, 2011. Specifications are subject to change without notice. The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time. Users should verify actual device performance in their specific applications. *RoHS COMPLIANT VERSIONS AVAILABLE *RoHS COMPLIANT LEAD FREE LEAD FREE VERSIONS ARE RoHS COMPLIANT* PTVS3-xxxC-M Series High Current TVS Diodes Performance Graphs V-I Characteristic Typical V vs. Junction Temperature BR 12 10 Normalized 8 12 to 25 C 6 10 4 8 Normalized to 25 C 2 6 0 4 -2 2 -4 0 -6 -2 -8 -4 -10 -6 -12 -8 -40 -20 0 20 40 60 80 100 120 140 -10 -12 Junction Temperature (C) -40 -20 0 20 40 60 80 100 120 140 Junction Temperature (C) Typical Surge Current Derating Current 8/20 s Waveform per IEC 61000-4-5 120 120 110 Test Waveform Parameters 100 tt = 8 s 100 120 120 90 td = 20 s 110 Test Waveform Parameters 80 100 80 tt = 8 s 70 100 90 td = 20 s 60 80 60 50 80 70 40 60 40 30 td = t IPP/2 60 50 20 40 20 10 40 30 td = t IPP/2 0 20 0 0 25 50 75 100 125 150 175 20 10 035 10 15 20 25 0 Ambient Temperature (C) 0 t Time (s) 0 0 25 50 75 100 125 150 175 This graph shows the typical device surge current derating versus 035 10 15 20 25 0 ambient temperature when subjected to the 8/20 s current waveform Ambient Temperature (C) per the IEC 61000-4-5 specification. This device is not intended for t Time (s) continuous operation at temperatures above 125 C. Application + A typical application for Power TVS products includes DC power line protection. + Exposed DC Power Exposed Interface DC Power Interface - - Specifications are subject to change without notice. The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time. Users should verify actual device performance in their specific applications. Percent of Rated Value Percent of Rated Value IPP Peak Pulse Current (% of IPP) V Change vs. Temperature (%) BR IPP Peak Pulse Current (% of IPP) V Change vs. Temperature (%) BR