PTVS3-076C-SH Bourns

Features Applications 3 kA, 8/20 s surge capability High power DC bus protection Low clamping voltage under surge Bidirectional TVS Surface mount package PTVS3-xxxC-SH Series High Current TVS Diodes General Information The PTVS3-xxxC-SH range of high current bidirectional TVS diodes is designed for use in high power DC bus clamping applications. These devices offer bidirectional port protection and are available with standoff voltage ratings of 58 V and 76 V. The devices are RoHS* compliant. They also meet IEC 61000-4-5 8/20 s current surge requirements. Absolute Maximum Ratings ( T = 25 C Unless Otherwise Noted) A Rating Symbol Value Unit PTVS3-058C-SH 58 Repetitive Standoff Voltage V V WM PTVS3-076C-SH 76 Peak Current Rating per 8/20 s IEC 61000-4-5 I 3kA PPM Operating Junction Temperature Range T -55 to +125 C J Storage Temperature Range T -55 to +150 C S Electrical Characteristics ( T = 25 C Unless Otherwise Noted) A Parameter Test Conditions Min. Typ. Max. Unit I Standby Current V = V 10 A D D WM PTVS3-058C-SH 64 67 70 V Breakdown Voltage I = 10 mA V (BR) BR PTVS3-076C-SH 85 90 95 PTVS3-058C-SH 110 (1) V Clamping Voltage I = 3 kA V C PP PTVS3-076C-SH 140 V Temperature Coef cient 0.1 %/C (BR) F = 10 kHz, PTVS3-058C-SH 2.3 C Capacitance nF V = 1 Vrms PTVS3-076C-SH 1.7 d (1) V measured at the time which is coincident with the peak surge current. C Asia-Paci c: Tel: +886-2 2562-4117 Fax: +886-2 2562-4116 EMEA: Tel: +36 88 520 390 Fax: +36 88 520 211 The Americas: Tel: +1-951 781-5500 Fax: +1-951 781-5700 www.bourns.com *RoHS Directive 2002/95/EC Jan. 27, 2003 including annex and RoHS Recast 2011/65/EU June 8, 2011. Speci cations are subject to change without notice. The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time. Users should verify actual device performance in their speci c applications. *RoHS COMPLIANT PTVS3-xxxC-SH Series High Current TVS Diodes Performance Graphs V-I Characteristic Typical V vs. Junction Temperature BR 16 14 12 10 8 6 25 C 4 2 0 -4 -6 -8 -40 -20 0 20 40 60 80 100 120 140 160 Junction Temperature (T ) - C J Typical Surge Current Derating Current 8/20 s Waveform per IEC 61000-4-5 120 120 Test Waveform Parameters 110 tt tt = 8 s 100 100 td = 20 s 90 80 t e 80 70 60 60 40 50 td = t IPP/2 40 20 30 20 0 10 035 10 15 20 250 0 t Time (s) 0 25 50 75 100 125 150 175 Ambient Temperature (C) This graph shows the typical device surge current derating versus ambient temperature when subjected to the 8/20 s current waveform per the IEC 61000-4-5 speci cation. This device is not intended for continuous operation at temperatures above 125 C. Speci cations are subject to change without notice. The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time. Users should verify actual device performance in their speci c applications. Percent of Rated Value Percent of V Change BR IPP Peak Pulse Current (% of IPP)