TISP4070J3BJ THRU TISP4395J3BJ BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS TISP4xxxJ3BJ Overvoltage Protector Series Ion-Implanted Breakdown Region Agency Recognition -Precise and Stable Voltage Description -Low Voltage Overshoot Under Surge UL File Number: E215609 Designed for Transformer Center Tap (Ground Return) Overvoltage Protection -Enables GR-1089-CORE Compliance SMB Package (Top View) -High Holding Current Allows Protection of Data Lines with d.c. Power Feed Can be Used to Protect Rugged Modems Designed for Exposed R1 2 T Applications Exceeding TIA-968-A V V MD-SMB-004-a DRM (BO) Device Name V V Device Symbol TISP4070J3BJ5870 TISP4080J3BJ 65 80 T TISP4095J3BJ7595 TISP4115J3BJ90 115 TISP4125J3BJ100 125 TISP4145J3BJ120 145 TISP4165J3BJ135 165 TISP4180J3BJ145 180 R SD-TISP4xxx-001-a TISP4200J3BJ155 200 Rated for International Surge Wave Shapes TISP4219J3BJ180 219 TISP4250J3BJ190 250 I PPSM Wave ShapeStandard TISP4290J3BJ 220 290 A TISP4350J3BJ 275 350 2/10 GR-1089-CORE 1000 TISP4395J3BJ320 395 8/20 IEC 61000-4-5800 10/160 TIA-968-A 400 10/700 ITU-T K.20/21/45 350 .................................................UL Recognized Component 10/560 TIA-968-A 250 10/1000GR-1089-CORE200 Description The range of TISP4xxxJ3BJ devices are designed to limit overvoltages on telecom lines. The TISP4xxxJ3BJ is primarily designed to address GR-1089-CORE compliance on data transmission lines with d.c. power feeding. When overvoltage protection is applied to transformer coupled lines from the transformer center tap to ground, the total ground return current can be 200 A, 10/1000 and 1000 A, 2/10. The high 150 mA holding current is set above common d.c. feed system levels to allow the TISP4xxxJ3BJ to reset following a disturbance. These devices allow signal voltages, without clipping, up to the maximum off-state voltage value, V , see Figure 1. Voltages above V DRM DRM are limited and will not exceed the breakover voltage, V , level. If sufficient current flows due to the overvoltage, the device switches into a (BO) low voltage on-state condition, which diverts the current from the overvoltage through the device. When the diverted current falls below the holding current, I , level the devices switches off and restores normal system operation. H How to Order Device Package Carrier Order As Marking Code Standard Quantity TISP4xxxJ3BJ SMB Embossed Tape Reeled TISP4xxxJ3BJR-S 4xxxJ3 3000 Insert xxx corresponding to device name. JULY 2003 REVISED JULY 2019 *RoHS Directive 2015/863, Mar 31, 2015 and Annex. Specifications are subject to change without notice. Users should verify actual device performance in their specific applications. WARNING Cancer and Reproductive Harm The products described herein and this document are subject to specific legal disclaimers as set forth on the last www.P65Warnings.ca.gov page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf. TISP4xxxJ3BJ Overvoltage Protector Series Absolute Maximum Ratings, T = 25 C (Unless Otherwise Noted) A Rating Symbol Value Unit 4070J3BJ 58 4080J3BJ 65 4095J3BJ 75 4115J3BJ 90 4125J3BJ 100 4145J3BJ 120 4165J3BJ 135 Repetitive peak off-state voltage V V DRM 4180J3BJ 145 4200J3BJ 155 4219J3BJ 180 4250J3BJ 190 4290J3BJ 220 4350J3BJ 275 4395J3BJ 320 Non-repetitive peak impulse current (see Notes 1 and 2) 2/10 s (GR-1089-CORE, 2/10 s voltage wave shape) 1000 8/20 s (IEC 61000-4-5, combination wave generator, 1.2/50 svoltage wave shape) 800 10/160s (TIA-968-A, 10/160 s voltage wave shape) 400 4/250 s (ITU-T K.20/21, 10/700 s voltage waveshape, simultaneous) 370 I A PPSM 5/310 s (ITU-T K.20/21, 10/700 s voltage wave shape, single) 350 5/320 s (TIA-968-A, 9/720 s voltage waveshape, single) 350 10/560s (TIA-968-A, 10/560 s voltage wave shape) 250 10/1000 s (GR-1089-CORE, 10/1000 s voltage wave shape) 200 Non-repetitive peak on-state current (see Notes 1 and 2) I 50 A 20 ms, 50 Hz (full sine wave) TSM Initial rate of rise of on-state current. Linear current ramp. Maximum ramp value < 50 A di /dt 800A/s T Junction temperature T -40 to +150 C J Storage temperature range T -65 to +150 C stg NOTES: 1. Initially the device must be in thermal equilibrium with T = 25 C. J 2. These non-repetitive rated currents are peak values of either polarity. The surge may be repeated after the device returns to its initial conditions. Electrical Characteristics, T = 25 C (Unless Otherwise Noted) A Parameter Test Conditions Min Typ Max Unit Repetitive peak T = 25 C 5 A I V = V A DRM D DRM off-state current T = 85 C 10 A 4070J3BJ 70 4080J3BJ 80 4095J3BJ 95 4115J3BJ 115 4125J3BJ 125 4145J3BJ 145 4165J3BJ 165 V AC Breakover voltage dv/dt=250V/ms, R = 300 V (BO) SOURCE 4180J3BJ 180 4200J3BJ 200 4219J3BJ 219 4250J3BJ 250 4290J3BJ 290 4350J3BJ 350 4395J3BJ 395 JULY 2003 REVISED JULY 2019 Specifications are subject to change without notice. Users should verify actual device performance in their specific applications. The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf.