1Kx ABA-31563 3.5 GHz Broadband Silicon RFIC Amplifier Data Sheet Description Features Avagos ABA-31563 is an economical, easy-to-use, internally Operating Frequency DC ~ 3.5GHz 50 matched, silicon monolithic broadband amplifier 21.5 dB Gain that offers excellent gain and broadband response from DC to 3.5 GHz. Packaged in an ultra-miniature VSWR < 2.0 throughout operating frequency SOT-363 package, it requires half the board space of 2.2 dBm Output P1dB a SOT-143 package. 13.1 dBm Output IP3 At 2 GHz, the ABA-31563 offers a small-signal gain of 3.8 dB Noise Figure 21.5 dB, output P1dB of 2.2 dBm and 13.1 dBm output Unconditionally Stable third order intercept point. It is suitable for use as wideband applications. They are designed for low cost Single 3V Supply (Id = 14 mA) gain blocks in cellular applications, DBS tuners, LNB and Lead-free other wireless communication systems. ABA-31563 is fabricated using Avagos HP25 silicon Applications bipolar process, which employs a double-diffused single Amplifier for Cellular, Cordless, Special Mobile Radio, polysilicon process with self-aligned submicron emitter PCS, ISM, Wireless LAN, DBS, TVRO, and TV Tuner geometry. The process is capable of simultaneous high Applications f and high NPN breakdown (25 GHz f at 6V BVCEO). The T T process utilizes industry standard device oxide isolation technologies and submicron aluminum multilayer interconnect to achieve superior performance, high uniformity, and proven reliability. Surface Mount Package Attention: SOT-363 /SC70 Observe precautions for handling electrostatic sensitive devices. ESD Machine Model (Class A) ESD Human Body Model (Class 1B) Refer to Avago Application Note A004R: Electrostatic Discharge Damage and Control. Pin Connections and Package Marking Simplified Schematic Output RF Vcc GND 2 Output & Vcc & Vcc GND 1 GND 3 Input Vcc RF Input Note: Ground 1 Top View. Package marking provides orientation and identification. x is the date code. Ground 2 Ground 31Kx 1 ABA-31563 Absolute Maximum Ratings 2 Thermal Resistance (Vcc = 3V) Symbol Parameter Units Absolute Max. = 125C/W j-c V Device Voltage, RF output to ground (T = 25C) V 6 Notes: cc 1. Operation of this device in excess of any P CW RF Input Power (Vcc = 3V) dBm 15 in of these limits may cause permanent 3 P Total Power Dissipation W 0.3 damage. diss 2. Thermal resistance measured using 150C T Junction Temperature C 150 j Liquid Crystal Measurement Technique. 3. Board (package belly) temperature, Tc, is T Storage Temperature C -65 to 150 STG 25C. Derate 2.3 mW/C for Tc > 120.8C. Electrical Specifications T = +25C, Z = 50 , P = -30 dBm, V = 3V, Freq = 2 GHz, unless stated otherwise. c o in cc Symbol Parameter and Test Condition Units Min. Typ. Max. Std Dev. 1 2 Gp Power Gain ( S ) dB 20.0 21.5 21 Gp Power Gain Flatness, f = 0.1 ~ 2.5 GHz dB 0.2 f = 0.1 ~ 3.5 GHz 1.3 1 NF Noise Figure dB 3.8 4.8 1 P1dB Output Power at 1dB Gain Compression dBm 2.2 1 OIP3 Output Third Order Intercept Point dBm 13.1 1 VSWR Input VSWR <1.5 in 1 VSWR Output VSWR <1.5 out 1 Icc Device Current mA 14 16 1 Td Group Delay ps 140 Notes: 1. Measurements taken on 50 test board shown on Figure 1. Excess circuit losses had been de-embedded from actual measurements. Standard deviation and typical data based on at least 500 parts sample size from 2 wafer lots. Future wafers allocated to this product may have nominal values anywhere within the upper and lower spec limits. C block 1 nF RF Output RFC 33 nH RF Input Vcc C block C C bypass bypass 1 nF 100 pF 1000 pF Figure 1. ABA-31563 Production Test Circuit. 2