AHx ABA-51563 3.5 GHz Broadband Silicon RFIC Amplifier Data Sheet Description Features Avagos ABA-51563 is an economical, easy-to- Operating frequency: DC ~ 3.5 GHz use, internally 50-ohm matched silicon monolithic 21.5 dB gain broadband amplifier that offers excellent gain and flat VSWR < 2.0 throughout operating frequency broadband response from DC to 3.5 GHz. Packaged in an ultraminiature industry-standard SOT-363 package, it 1.8 dBm output P1dB requires half the board space of a SOT-143 package. 3.7 dB noise figure At 2 GHz, the ABA-51563 offers a small-signal gain of Unconditionally stable 21.5 dB, output P1dB of 1.8 dBm and 11.4 dBm output Single 5V supply (Id = 18 mA) third order intercept point. It is suitable for use as buffer amplifiers for wideband applications. They are designed Lead-free option available for low cost gain blocks in cellular applications, DBS tuners, LNB and other wireless communications systems. Applications ABA-51563 is fabricated using Avagos HP25 silicon Amplifier for cellular, cordless, special mobile radio, PCS, bipolar process, which employs a double-diffused single ISM, wireless LAN, DBS, TVRO, and TV tuner applications polysilicon process with self-aligned submicron emitter geometry. The process is capable of simultaneous high f and high NPN breakdown (25 GHz f at 6V BVCEO). The T T process utilizes industry standard device oxide isolation technologies and submicron aluminum multilayer interconnect to achieve superior performance, high uniformity, and proven reliability. Attention: Observe precautions for handling electrostatic Surface Mount Package: SOT-363 /SC70 sensitive devices. ESD Machine Model (Class A) ESD Human Body Model (Class 1A) Refer to Avago Application Note A004R: Electrostatic Discharge Damage and Control. Pin Connections and Package Marking Simplified Schematic RF Output Vcc GND 2 Output & Vcc & Vcc GND 1 GND 3 Vcc RF Input Input Note: Ground 1 Top View. Package marking provides orientation and identification. x is character to identify date code. Ground 3 Ground 2AHx 1 ABA-51563 Absolute Maximum Ratings 2 Thermal Resistance (Vcc = 5V) Symbol Parameter Units Absolute Max. = 104C/W jc V Device Voltage, RF output to ground (T = 25C) V +7 Notes: cc 1. Operation of this device in excess of any P CW RF Input Power (Vcc = 5V) dBm +20 in of these limits may cause permanent 3 damage. P Total Power Dissipation W 0.3 diss 2. Thermal resistance measured using 150C T Junction Temperature C 150 j Liquid Crystal Measurement Technique. 3. Board (package belly) temperature, Tb, is T Storage Temperature C -65 to 150 STG 25C. Derate 2.3 mW/C for Tb > 120.8C. Electrical Specifications T = +25C, Z = 50 , P = -30 dBm, V = 5V, Freq = 2 GHz, unless stated otherwise. c o in cc Symbol Parameter and Test Condition Units Min. Typ. Max. Std Dev. 1 2 Gp Power Gain ( S ) dB 20 21.5 0.2 21 Gp Power Gain Flatness, f = 0.1 ~ 2.5 GHz dB 1.0 f = 0.1 ~ 3.5 GHz 1.3 1 NF Noise Figure dB 3.7 4 0.12 1 P1dB Output Power at 1dB Gain Compression dBm 1.8 0.13 1 OIP3 Output Third Order Intercept Point dBm 11.4 0.24 1 VSWR Input VSWR 1.2 in 1 VSWR Output VSWR 1.2 out 1 Icc Device Current mA 18 28 0.3 1 td Group Delay ps 140 Notes: 1. Measurements taken on 50 test board shown on Figure 1. Excess circuit losses had been de-embedded from actual measurements. Standard deviation and typical data based on at least 500 parts sample size from 6 wafer lots. Future wafers allocated to this product may have nominal values anywhere within the upper and lower spec limits. C block RF Output RFC RF Input Vcc C block C bypass Figure 1. ABA-51563 Production Test Circuit. 2