2Hx ABA-52563 3.5 GHz Broadband Silicon RFIC Amplifier Data Sheet Description Features Avagos ABA-52563 is an ec onomical, easy-to-use, inter- Operating frequency: DC ~ 3.5 GHz nally 50-ohm matched silicon monolithic amplifier that 21.5 dB gain offers ex cellent gain and flat broadband response from VSWR < 2.0 throughout operating frequency DC to 3.5 GHz. Packaged in an ultraminiature industry- standard SOT-363 package, it requires half the board 9.8 dBm output P1dB space of a SOT-143 package. 3.3 dB noise figure At 2 GHz, the ABA-52563 offers a small-signal gain of Unconditionally stable 21.5 dB, output P1dB of 9.8 dBm and 19.9 dBm output third Single 5V supply (Id = 35 mA) order intercept point. It is suitable for use as buffer ampli - Lead-free option available fiers for wideband applications. They are designed for low cost gain blocks in cellular applications, DBS tuners, LNB Applications and other wireless communications systems. Amplifier for cellular, cordless, special mobile radio, ABA-52563 is fabricated using Avagos HP25 silicon PCS, ISM, wireless LAN, DBS, TVRO, and TV tuner bipolar process, which employs a double-diffused single applications polysilicon process with self-aligned submicron emitter geometry. The process is capable of simultaneous high f T and high NPN breakdown (25 GHz f at 6V BVCEO). The T process utilizes industry standard device oxide isolation technologies and submicr on aluminum multilayer inter- connect to achieve superior performance, high uniformity, and proven reliability. Surface Mount Package: SOT-363/SC70 Simplified Schematic RF Vcc Output & Vcc RF Input Ground 1 Pin Connections and Package Marking Output GND 2 & Vcc Ground 3 Ground 2 GND 1 GND 3 Vcc Input Note: Top View. Package marking provides orientation and identification. x is character to identify date code.2Hx 1 ABA-52563 Absolute Maximum Ratings 2 Symbol Parameter Units Absolute Max. Thermal Resistance (Vcc = 5V): = 106C/W jc V Device Voltage, RF output to ground (T = 25C) V +7 cc Notes: P CW RF Input Power (Vcc = 5V) dBm +20 in 1. Operation of this device in excess of any of 3 P Total Power Dissipation W 0.4 diss these limits may cause permanent damage. 2. Thermal resistance measured using 150C T Junction Temperature C 150 j Liquid Crystal Measurement Technique. T Storage Temperature C -65 to 150 3. Board (package belly) temperature, Tb, is STG 25C. Derate 3.5 mW/C for Tb > 109C. Electrical Specifications T = +25C, Z = 50 , P = -30 dBm, V = 5V, Freq = 2 GHz, unless stated otherwise. c o in cc Symbol Parameter and Test Condition Units Min. Typ. Max. Std Dev. 1 2 Gp Power Gain ( S ) dB 20 21.5 0.2 21 Gp Power Gain Flatness, f = 0.1 ~ 2.5 GHz dB 0.5 f = 0.1 ~ 3.5 GHz 2.1 1 NF Noise Figure dB 3.3 4 0.12 1 P1dB Output Power at 1dB Gain Compression dBm 9.8 0.15 1 OIP3 Output Third Order Intercept Point dBm 19.9 0.18 1 VSWR Input VSWR 1.2 in 1 VSWR Output VSWR 1.4 out 1 Icc Device Current mA 35 43 0.5 1 td Group Delay ps 150 Notes: 1. Measurements taken on 50 test board shown on Figure 1. Excess circuit losses had been de-embedded from actual measurements. Standard deviation and typical data based on at least 500 parts sample size from 6 wafer lots. Future wafers allocated to this product may have nominal values anywhere within the upper and lower spec limits. C block RF Output RFC RF Input Vcc C block C bypass Figure 1. ABA-52563 Production Test Circuit. 2