3Hx ABA-53563 3.5 GHz Broadband Silicon RFIC Amplifier Data Sheet Description Features Avagos ABA-53563 is an economical, easy-to-use, Operating frequency: DC ~ 3.5 GHz internally 50-ohm matched silicon monolithic 21.5 dB gain amplifier that offers excellent gain and flat broadband response from DC to 3.5 GHz. Packaged in an ultra- VSWR < 2.0 throughout operating frequency miniature industry-standard SOT-363 package, it 12.7 dBm output P1dB requires half the board space of a SOT-143 package. 3.5 dB noise figure At 2 GHz, the ABA-53563 offers a small-signal gain Unconditionally stable of 21.5 dB, output P1dB of 12.7 dBm and 22.9 dBm output third order intercept point. It is suitable for Single 5V supply (Id = 46 mA) use as buffer amplifiers for wideband applications. Lead-free option available They are designed for low cost gain blocks in cellular applications, DBS tuners, LNB and other wireless communications systems. Applications Amplifier for cellular, cordless, special mobile radio, PCS, ABA-53563 is fabricated using Avagos HP25 silicon ISM, wireless LAN, DBS, TVRO, and TV tuner applications bipolar process, which employs a double-diffused single polysilicon process with self-aligned submicron emitter geometry. The process is capable of simultaneous high f and high NPN breakdown T Attention: (25 GHz f at 6V BVCEO). The process utilizes indus- T Observe precautions for try standard device oxide isolation technologies and handling electrostatic submicron aluminum multilayer interconnect to sensitive devices. achieve superior performance, high uniformity, and ESD Machine Model (Class A) proven reliability. ESD Human Body Model (Class 1A) Surface Mount Package: SOT-363/SC70 Refer to Agilent Application Note A004R: Electrostatic Discharge Damage and Control. Simplified Schematic RF Vcc Output & Vcc Pin Connections and Package Marking Output GND 1 & Vcc RF Input GND 2 GND 3 Ground 2 Vcc Input Ground 3 Ground 1 Note: Top View. Package marking provides orientation and identification. x is character to identify date code.3Hx 1 ABA-53563 Absolute Maximum Ratings 2 Symbol Parameter Units Absolute Max. Thermal Resistance (Vcc = 5V) = 117C/W jc V Device Voltage, RF output to ground (T = 25C) V +7 cc Notes: P CW RF Input Power (Vcc = 5V) dBm +20 in 1. Operation of this device in excess of any of 3 P Total Power Dissipation W 0.47 diss these limits may cause permanent damage. 2. Thermal resistance measured using 150C T Junction Temperature C 150 j Liquid Crystal Measurement Technique. T Storage Temperature C -65 to 150 3. Board (package belly) temperature, Tb, is STG 25C. Derate 5 mW/C for Tb > 94.8C. Electrical Specifications T = +25C, Z = 50 , P = -30 dBm, V = 5V, Freq = 2 GHz, unless stated otherwise. c o in cc Symbol Parameter and Test Condition Units Min. Typ. Max. Std Dev. 2 1 Gp Power Gain ( S ) dB 20 21.5 0.2 21 Gp Power Gain Flatness, f = 0.1 ~ 2.5 GHz dB 0.6 f = 0.1 ~ 3.5 GHz 2.7 1 NF Noise Figure dB 3.5 4 0.11 1 P1dB Output Power at 1dB Gain Compression dBm 12.7 0.14 1 OIP3 Output Third Order Intercept Point dBm 22.9 0.14 1 VSWR Input VSWR 1.1 in 1 VSWR Output VSWR 1.2 out 1 Icc Device Current mA 46 57 0.6 1 td Group Delay ps 160 Notes: 1. Measurements taken on 50 test board shown on Figure 1. Excess circuit losses had been de-embedded from actual measurements. Standard deviation and typical data based on at least 500 parts sample size from 6 wafer lots. Future wafers allocated to this product may have nominal values anywhere within the upper and lower spec limits. C block RF Output RFC RF Input Vcc C block C bypass Figure 1. ABA-53563 Production Test Circuit. 2